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AlGaN/GaN HEMT 电流崩塌研究 学位论文
, 北京: 中国科学院研究生院, 2013
Authors:  万晓佳
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Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 10, 页码: 104002
Authors:  Xiaojia, Wan;  Xiaoliang, Wang;  Hongling, Xiao;  Chun, Feng;  Lijuan, Jiang;  Shenqi, Qu;  Zhanguo, Wang;  Xun, Hou
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