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Electronic and Mechanical Coupling in Bent ZnO Nanowires 期刊论文
ADVANCED MATERIALS, 2009, 卷号: 21, 期号: 48, 页码: 4937
Authors:  Han XB;  Kou LZ;  Lang XL;  Xia JB;  Wang N;  Qin R;  Lu J;  Xu J;  Liao ZM;  Zhang XZ;  Shan XD;  Song XF;  Gao JY;  Guo WL;  Yu DP;  Guo, WL, Nanjing Univ Aeronaut & Astronaut, Inst Nanosci, Nanjing 210016, Peoples R China. E-mail Address:;
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Quantum Wires  Si Substrate  Strain  Arrays  Photoluminescence  Silicon  
Non-exponential photoluminescence decay dynamics of localized carriers in disordered InGaN/GaN quantum wells: the role of localization length 期刊论文
OPTICS EXPRESS, 2006, 卷号: 14, 期号: 26, 页码: 13151-13157
Authors:  Wang, YJ (Wang, Y. J.);  Xu, SJ (Xu, S. J.);  Zhao, DG (Zhao, D. G.);  Zhu, JJ (Zhu, J. J.);  Yang, H (Yang, H.);  Shan, XD (Shan, X. D.);  Yu, DP (Yu, D. P.);  Wang, YJ, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. 电子邮箱地址:
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Time-resolved Photoluminescence