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半导体纳米线和二类超晶格的电子结构和光学性质研究 学位论文
, 北京: 中国科学院研究生院, 2013
Authors:  郎晓丽
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Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 42, 页码: 425103
Authors:  Lang, XL;  Xia, JB;  Lang, XL (reprint author), CAS, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China,langxiaoli@semi.ac.cn;  xiajb@semi.ac.cn
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Gasb Super-lattice  Semiconductor Heterostructures  Deformation Potentials  Ii Superlattices  Band Parameters  Detectors  Approximation  Transitions  
Electronic and Mechanical Coupling in Bent ZnO Nanowires 期刊论文
ADVANCED MATERIALS, 2009, 卷号: 21, 期号: 48, 页码: 4937
Authors:  Han XB;  Kou LZ;  Lang XL;  Xia JB;  Wang N;  Qin R;  Lu J;  Xu J;  Liao ZM;  Zhang XZ;  Shan XD;  Song XF;  Gao JY;  Guo WL;  Yu DP;  Guo, WL, Nanjing Univ Aeronaut & Astronaut, Inst Nanosci, Nanjing 210016, Peoples R China. E-mail Address: wlguo@nuaa.edu.cn;  yudp@pku.edu.cn
Adobe PDF(653Kb)  |  Favorite  |  View/Download:1160/499  |  Submit date:2010/04/04
Quantum Wires  Si Substrate  Strain  Arrays  Photoluminescence  Silicon  
GaN的声表面波特性研究 期刊论文
发光学报, 2003, 卷号: 24, 期号: 2, 页码: 161-164
Authors:  严莉;  陈晓阳;  何世堂;  李红浪;  韩培德;  陈振;  陆大成;  刘祥林;  王晓晖;  李昱峰;  袁海荣;  陆沅;  黎大兵;  朱勤生;  王占国
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2”直径的半绝缘磷化铟单晶 成果
1992
Accomplishers:  刘巽琅;  叶式中;  赵建群;  焦景华;  曹惠梅
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磷化铟单晶  
集成电路用半绝缘砷化镓热稳定性和均匀性研究 成果
1991
Accomplishers:  林兰英;  何宏家;  刘巽琅;  曹福年;  白玉珂
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半绝缘砷化镓  
可控电参数的低位错磷化铟单晶制备 成果
1985
Accomplishers:  叶式中;  刘巽琅;  刘思林;  孙同年;  焦景华
Favorite  |  View/Download:641/0  |  Submit date:2010/04/13
磷化铟