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The Fabrication of Micro/Nano Structures by Laser Machining 期刊论文
Nanomaterials, 2019, 卷号: 9, 页码: 1789
Authors:  Liangliang Yang;   Jiangtao Wei ;   Zhe Ma ;   Peishuai Song;   Jing Ma ;   Yongqiang Zhao;   Zhen Huang ;   Mingliang Zhang ;   Fuhua Yang ;   Xiaodong Wang
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Formation and evolution of intermetallic layer structures at SAC305/Ag/Cu and SAC0705-Bi-Ni/Ag/Cu solder joint interfaces after reflow and aging 期刊论文
Authors:  Liu, Yang;  Meerwijk, Joost;  Luo, Liangliang;  Zhang, Honglin;  Sun, Fenglian;  Yuan, Cadmus A.;  Zhang, Guoqi
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Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 卷号: 509, 期号: 3, 页码: 748-750
Authors:  Deng Y;  Zhao DG;  Le LC;  Jiang DS;  Wu LL;  Zhu JJ;  Wang H;  Liu ZS;  Zhang SM;  Yang H;  Liang JW;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
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Nitride Materials  Crystal Growth  Composition Fluctuations  X-ray Diffraction  Layer  
Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 卷号: 24, 期号: 7, 页码: Art. No. 075004
Authors:  Wang H;  Wang LL;  Sun X;  Zhu JH;  Liu WB;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Wang YT;  Zhang SM;  Yang H;  Wang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address:
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Electron-transport  Phase Epitaxy  Nitride Inn  Band-gap  
MOCVD growth of InN using a GaN buffer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2008, 卷号: 43, 期号: 2, 页码: 81-85
Authors:  Wang LL;  Wang H;  Chen J;  Sun X;  Zhu JJ;  Jiang DS;  Yang H;  Liang JW;  Wang, LL, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition 期刊论文
MATERIALS LETTERS, 2007, 卷号: 61, 期号: 2, 页码: 516-519
Authors:  Wang H;  Huang Y;  Sun Q;  Chen J;  Zhu JJ;  Wang LL;  Wang YT;  Yang H;  Wu MF;  Qu YH;  Jiang DS;  Wang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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X-ray Diffraction  
InGaN太阳能电池及其制作方法 专利
专利类型: 发明, 公开日期: 2012-12-19
Inventors:  李亮;  赵德刚;  江德生;  刘宗顺;  陈平;  吴亮亮;  乐伶聪;  杨辉
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改进p-GaN薄膜欧姆接触的材料结构及其制备方法 专利
专利类型: 发明, 公开日期: 2013-05-01
Inventors:  吴亮亮;  赵德刚;  江德生;  刘宗顺;  陈平;  李亮;  乐伶聪;  杨辉
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含有变In组分InGaN/GaN多层量子阱结构的太阳能电池 专利
专利类型: 发明, 公开日期: 2013-05-08
Inventors:  杨静;  赵德刚;  李亮;  吴亮亮;  乐伶聪;  李晓静;  何晓光
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