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Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 5, 页码: 54320
Authors:  Ning JQ;  Xu SJ;  Ruan XZ;  Ji Y;  Zheng HZ;  Sheng WD;  Liu HC;  Ning, JQ (reprint author), Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China,
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Wells  Relaxation  Hole  Photoluminescence  Semiconductors  Localization  Transitions  Excitons  Carriers  Growth  
Tuning photoluminescence of single InAs quantum dot by electric field 期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 6, 页码: 4279-4282
Authors:  Chang XY (Chang Xiu-Ying);  Dou XM (Dou Xiu-Ming);  Sun BQ (Sun Bao-Quan);  Xiong YH (Xiong Yong-Hua);  Ni HQ (Ni Hai-Qiao);  Niu ZC (Niu Zhi-Chuan);  Sun, BQ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
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Single Inas Quantum Dot  Stark Effect  Electron-hole Separation  
Temperature dependence of hole spin relaxation in ultrathin InAs monolayers 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 卷号: 42, 期号: 5, 页码: 1597-1600
Authors:  Li T;  Zhang XH;  Zhu YG;  Huang X;  Han LF;  Shang XJ;  Ni HQ;  Niu ZC;  Zhang, XH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Ultrathin Inas Monolayer  Hole Spin Relaxation  Dp Mechanism  Semiconductor Quantum Dots  Wells  Gaas  
Anomalous shift of the beating nodes in illumination-controlled In1-xGaxAs/In1-yAlyAs two-dimensional electron gases with strong spin-orbit interaction 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 81, 期号: 19, 页码: Art. No. 195312
Authors:  Zhou WZ (Zhou W. Z.);  Lin T (Lin T.);  Shang LY (Shang L. Y.);  Yu G (Yu G.);  Gao KH (Gao K. H.);  Zhou YM (Zhou Y. M.);  Wei LM (Wei L. M.);  Cui LJ (Cui L. J.);  Zeng YP (Zeng Y. P.);  Guo SL (Guo S. L.);  Chu JH (Chu J. H.);  Zhou, WZ, E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200062, Peoples R China. 电子邮箱地址:;
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Inxga1-xas/inp Quantum-wells  Inversion Asymmetry  Hole Systems  Heterostructures  Subband  Layers  
Surface plasmon waves generated by nanogrooves through spectral interference 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 81, 期号: 8, 页码: Art. No. 085443
Authors:  Gan QQ (Gan Qiaoqiang);  Gao YK (Gao Yongkang);  Wang Q (Wang Qing);  Zhu L (Zhu Lin);  Bartoli F (Bartoli Filbert);  Gan, QQ, Lehigh Univ, Dept Elect & Comp Engn, Ctr Opt Technol, Bethlehem, PA 18015 USA. E-mail Address:
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Extraordinary Optical-transmission  Nanostructured Surfaces  Hole Arrays  Light  Model  Interferometry  Objects  Films  
Spin states in InAs/AlSb/GaSb semiconductor quantum wells 期刊论文
PHYSICAL REVIEW B, 2009, 卷号: 80, 期号: 3, 页码: Art. No. 035303
Authors:  Li J;  Yang W;  Chang K;  Li J Chinese Acad Sci Inst Semicond SKLSM POB 912 Beijing 100083 Peoples R China. E-mail Address:
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Electron-hole System  Band-structure  Compound Semiconductors  Relaxation Anisotropy  Gap Heterostructures  Optical-transitions  Ground-state  Superlattices  Field  Hybridization  
Anisotropic exchange splitting of excitons in (001)GaAs/Al0.3Ga0.7As superlattice studied by reflectance difference spectroscopy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 104, 期号: 1, 页码: Art. No. 013106
Authors:  Zhou, ZY;  Tang, CG;  Chen, YH;  Wang, ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Fine-structure  Quantum-wells  Gaas/alas Superlattices  Semiconductors  Temperature  Hole  
High-frequency characterization of packaging network in to-can photodiode modules 期刊论文
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2008, 卷号: 50, 期号: 5, 页码: 1219-1223
Authors:  Zhu, NH;  Wen, JM;  Zhang, SJ;  Zhu, NH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Opetoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Equivalent Circuits  Scattering-parameters Measurement  Test Fixture Calibration  Photodiode  Through Hole (To) Packaging  
Fabrication and characterization of TO packaged high-speed laser modules - art. no. 682407 会议论文
Authors:  Wen, JM;  Liu, Y;  Wang, X;  Yuan, HQ;  Xie, L;  Zhu, NH;  Zhu, NH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
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Equivalent Circuits  Fp Laser Modules  Dfb Laser Modules  Vcsel Modules  Through Hole (To) Packaging  
Effects of phase-breaking on long-range charge transfer in DNA: Partially-coherent-tunneling model study 期刊论文
JOURNAL OF THEORETICAL & COMPUTATIONAL CHEMISTRY, 2006, 卷号: 5 Sp.Iss, 期号: 0, 页码: 317-329
Authors:  Han P (Han Ping);  Li XQ (Li Xin-Qi);  Zhang HY (Zhang Houyu);  He GZ (He Guozhong);  Yan YJ (Yan Yijing);  Yan, YJ, Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China. E-mail:
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Electron Transfer  Dna  Dephasing  Nonadiabatic Electron-transfer  Bridged Molecular-systems  Liouville-space  Transfer Rates  Distance Dependence  Dielectric Friction  Solvation Dynamics  Hole Transport  Adenine Bases  Nucleic-acid