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Electrical characteristics of a vertical light emitting diode with N-type contacts on a selectively wet-etching roughened surface 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 2, 页码: 24009
Authors:  Wang, Liancheng;  Guo, Enqing;  Liu, Zhiqiang;  Yi, Xiaoyan;  Wang, Guohong;  Wang, L.(wanglc@semi.ac.cn)
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Gallium Nitride  Leakage Currents  Light Emission  Light Emitting Diodes  Metallizing  Polarization  Testing  Water Analysis  
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.69
Authors:  Liu JM;  Liu XL;  Li CM;  Wei HY;  Guo Y;  Jiao CM;  Li ZW;  Xu XQ;  Song HP;  Yang SY;  Zhu QS;  Wang ZG;  Yang AL;  Yang TY;  Wang HH;  Liu, JM, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. liujianming@semi.ac.cn;  xlliu@semi.ac.cn
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Cathodoluminescence Characterization  Gallium Nitride  Stresses  Layers  Heterostructure  Deposition  Constants  Mechanism  Sapphire  Strain  
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 464-467
Authors:  Pan X;  Wei M;  Yang CB;  Xiao HL;  Wang CM;  Wang XL;  Pan, X, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100864, Peoples R China. xpan@semi.ac.cn
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Sandwich Structure  Stress  Aluminum Nitride  Gallium Nitride  Silicon  Phonon Deformation Potentials  Wurtzite Aln  Silicon  Stress  Transistors  Epitaxy  Layers  
Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 8, 页码: 83003
Authors:  Bi, Yang;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai;  Peng, Enchao;  Lin, Defeng;  Feng, Chun;  Jiang, Lijuan,;  Bi, Y.(ybi@semi.ac.cn)
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Aluminum  Electron Mobility  Gallium Nitride  High Electron Mobility Transistors  Indium  Poisson Equation  Polarization  Two Dimensional Electron Gas  
Structures and optical characteristics of InGaN quantum dots grown by MBE 期刊论文
Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering, 2011, 卷号: 40, 期号: 11, 页码: 2030-2032
Authors:  Wang, Baozhu;  Yan, Cuiying;  Wang, Xiaoliang;  Wang, B.(wangbz@semi.ac.cn)
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Atomic Force Microscopy  Gallium Nitride  Molecular Beam Epitaxy  Optical Materials  Optical Properties  Reflection High Energy Electron Diffraction  Sapphire  
Optical and electrical characteristics of GaN vertical light emitting diode with current block layer 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 64007
Authors:  Guo, Enqing;  Liu, Zhiqiang;  Wang, Liancheng;  Yi, Xiaoyan;  Wang, Guohong;  Guo, E.(guoeq@semi.ac.cn)
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Drops  Efficiency  Electric Contactors  Gallium Nitride  Light Emission  Ohmic Contacts  Silica  
T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation 期刊论文
Applied Physics A: Materials Science and Processing, 2011, 页码: 1-5
Authors:  Du, Y.D.;  Cao, H.Z.;  Yan, W.;  Han, W.H.;  Liu, Y.;  Dong, X.Z.;  Zhang, Y.B.;  Jin, F.;  Zhao, Z.S.;  Yang, F.H.;  Duan, X.M.;  Han, W.H.(weihua@semi.ac.cn)
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Ablation  Drain Current  Fabrication  Gallium Nitride  High Electron Mobility Transistors  Photoresists  Ultrashort Pulses  
Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 64001
Authors:  Zhang, Renping;  Yan, Wei;  Wang, Xiaoliang;  Yang, Fuhua;  Zhang, R.(zhangrenping@semi.ac.cn)
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Aspect Ratio  Current Density  Drain Current  Electric Network Analysis  Electric Network Analyzers  Electron Mobility  Fabrication  Gallium Nitride  Ohmic Contacts  Passivation  Silicon Nitride  Silicon Wafers  
Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer 期刊论文
IEEE International Conference on Group IV Photonics GFP, 2011, 卷号: 32, 期号: 11, 页码: 114007
Authors:  Li, Zhicong;  Li, Panpan;  Wang, Bing;  Li, Hongjian;  Liang, Meng;  Yao, Ran;  Li, Jing;  Deng, Yuanming;  Yi, Xiaoyan;  Wang, Guohong;  Li, Jinmin;  Li, Z.(lizc@semi.ac.cn)
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Diodes  Electrostatic Devices  Electrostatic Discharge  Gallium Alloys  Gallium Nitride  Light Emission  
High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 3, 页码: 33002
Authors:  Yin, Haibo;  Wang, Xiaoliang;  Ran, Junxue;  Hu, Guoxin;  Zhang, Lu;  Xiao, Hongling;  Li, Jing;  Li, Jinmin;  Yin, H.(hbyin@semi.ac.cn)
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Epitaxial Growth  Gallium Nitride