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Quantum cascade infrared photodetectors 期刊论文
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 卷号: 40, 期号: 8, 页码: 1397-1402
Authors:  Liu, Junqi;  Zhai, Shenqiang;  Kong, Ning;  Li, Lu;  Liu, Fengqi;  Wang, Lijun;  Wang, Zhanguo;  Liu, J.(
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Detectors  Electron Mobility  Infrared Detectors  Optoelectronic Devices  Photovoltaic Effects  Quantum Chemistry  Semiconductor Quantum Wells  
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 4, 页码: Article no.48102
Authors:  Wei M;  Wang XL;  Xiao HL;  Wang CM;  Pan X;  Hou QF;  Wang ZG;  Wei, M, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China.
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Electron-mobility Transistors  Al-content  Stress-control  Phase Epitaxy  Algan  Buffer  Layers  Heterostructures  Interlayers  Silicon  
Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 8, 页码: 83003
Authors:  Bi, Yang;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai;  Peng, Enchao;  Lin, Defeng;  Feng, Chun;  Jiang, Lijuan,;  Bi, Y.(
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Aluminum  Electron Mobility  Gallium Nitride  High Electron Mobility Transistors  Indium  Poisson Equation  Polarization  Two Dimensional Electron Gas  
Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 64001
Authors:  Zhang, Renping;  Yan, Wei;  Wang, Xiaoliang;  Yang, Fuhua;  Zhang, R.(
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Aspect Ratio  Current Density  Drain Current  Electric Network Analysis  Electric Network Analyzers  Electron Mobility  Fabrication  Gallium Nitride  Ohmic Contacts  Passivation  Silicon Nitride  Silicon Wafers  
Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 12, 页码: Article no.123512
Authors:  Lv YJ;  Lin ZJ;  Zhang Y;  Meng LG;  Luan CB;  Cao ZF;  Chen H;  Wang ZG;  Lin, ZJ, Shandong Univ, Sch Phys, Jinan 250100, Peoples R China.
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2-dimensional Electron-gas  Interfacial Layer  Mobility  
Room temperature GaN/AlGaN self-mixing terahertz detector enhanced by resonant antennas 期刊论文
Applied Physics Letters, 2011, 卷号: 98, 期号: 25, 页码: 252103
Authors:  Sun, Y.F.;  Sun, J.D.;  Zhou, Y.;  Tan, R.B.;  Zeng, C.H.;  Xue, W.;  Qin, H.;  Zhang, B.S.;  Wu, D.M.,;  Wu, D. M.(
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Antennas  Dc Power Transmission  Electron Mobility  High Electron Mobility Transistors  Low Pass Filters  Terahertz Wave Detectors  
T-shaped gate AlGaN/GaN HEMTs fabricated by femtosecond laser lithography without ablation 期刊论文
Applied Physics A: Materials Science and Processing, 2011, 页码: 1-5
Authors:  Du, Y.D.;  Cao, H.Z.;  Yan, W.;  Han, W.H.;  Liu, Y.;  Dong, X.Z.;  Zhang, Y.B.;  Jin, F.;  Zhao, Z.S.;  Yang, F.H.;  Duan, X.M.;  Han, W.H.(
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Ablation  Drain Current  Fabrication  Gallium Nitride  High Electron Mobility Transistors  Photoresists  Ultrashort Pulses  
Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 卷号: 42, 期号: 15, 页码: Art. No. 155403
Authors:  Gai YQ;  Li JB;  Hou QF;  Wang XL;  Xiao HL;  Wang CM;  Li JM;  Li JB Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China. E-mail Address:
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N-type Gan  Electron-mobility Transistors  Vapor-phase Epitaxy  Defects  Thermoluminescence  Carbon  Trap  
Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 5, 页码: Art. No. 052101
Authors:  Yang AL;  Song HP;  Liu XL;  Wei HY;  Guo Y;  Zheng GL;  Jiao CM;  Yang SY;  Zhu QS;  Wang ZG;  Yang AL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address:;
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Aluminium Compounds  Conduction Bands  Energy Gap  High Electron Mobility Transistors  Iii-v Semiconductors  Magnesium Compounds  Passivation  Semiconductor Heterojunctions  Valence Bands  Wide Band Gap Semiconductors  X-ray Photoelectron Spectra  
Dislocation scattering in AlxGa1-xN/GaN heterostructures 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 93, 期号: 18, 页码: Art. No. 182111
Authors:  Xu, XQ;  Liu, XL;  Han, XX;  Yuan, HR;  Wang, J;  Guo, Y;  Song, HP;  Zheng, GL;  Wei, HY;  Yang, SY;  Zhu, QS;  Wang, ZG;  Xu, XQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:;
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Aluminium Compounds  Dislocation Density  Electron Mobility  Gallium Compounds  Iii-v Semiconductors  Interface Roughness  Semiconductor Heterojunctions  Two-dimensional Electron Gas  Wide Band Gap Semiconductors