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A 630dpi dynamic LED display array in standard Si-based CMOS technology 期刊论文
SCIENCE CHINA-INFORMATION SCIENCES, 2012, 卷号: 55, 期号: 10, 页码: 2409-2416
Authors:  Dong Z (Dong Zan);  Wang W (Wang Wei);  Huang BJ (Huang BeiJu);  Zhang X (Zhang Xu);  Guan N (Guan Ning);  Chen HD (Chen HongDa)
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硅基标准CMOS 工艺光发射器件及阵列研究 学位论文
, 北京: 中国科学院研究生院, 2011
Authors:  董赞
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Schottky barrier light emitting diode in standard CMOS technology 期刊论文
Group IV Photonics (GFP), 2011 8th IEEE International Conference on, 2011, 页码: 296-298
Authors:  Huang, Beiju;  Wang, Wei;  Dong, Zan;  Zhang, Zanyun;  Guo, Weilian;  Chen, Hongda;  Huang, B.(bjhuang@semi.ac.cn)
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Cmos Integrated Circuits  Diodes  Light  Light Emission  Photonics  Schottky Barrier Diodes  Semiconducting Silicon Compounds  Semiconductor Diodes  
Temporal Differential CMOS Image Sensor for Low-Light and High-Speed Applications 会议论文
International Symposium on Photoelectronic Detection and Imaging 2011 - Advances in Imaging Detectors and Applications, Beijing, PEOPLES R CHINA, 2011
Authors:  Guan N (Guan Ning);  Zhang X (Zhang Xu);  Dong Z (Dong Zan);  Wang W (Wang Wei);  Gui Y (Gui Yun);  Han JQ (Han Jianqiang);  Wang Y (Wang Yuan);  Huang BJ (Huang Beiju);  Chen HD (Chen Hongda)
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Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 1, 页码: Article no.18503
Authors:  Wang W;  Huang BJ;  Dong Z;  Chen HD;  Wang, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. wangweiww33@semi.ac.cn
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Optoelectronic Integrated Circuit  Complementary Metal-oxide-semiconductor Technology  Silicon-based Light Emitting Device  Electroluminescence  Avalanche Breakdown  Photon-emission  Current-density  Diodes  Model  Electroluminescence  Superlattices  Efficiency  Junctions  Leds  
A Low-Voltage Silicon Light Emitting Device in Standard Salicide CMOS Technology 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 4, 页码: Art. No. 048501
Authors:  Wang W (Wang Wei);  Huang BJ (Huang Bei-Ju);  Dong Z (Dong Zan);  Liu HJ (Liu Hai-Jun);  Zhang X (Zhang Xu);  Guan N (Guan Ning);  Chen J (Chen Jin);  Guo WL (Guo Wei-Lian);  Niu PJ (Niu Ping-Juan);  Chen HD (Chen Hong-Da);  Wang, W, Chinese Acad Sci, Inst Semicond, Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: wangweiww33@semi.ac.cn
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Superlattices  
SOI衬底CMOS工艺电光调制器 专利
专利类型: 发明, 申请日期: 2009-06-17, 公开日期: 3998
Inventors:  陈弘达;  黄北举;  董 赞 
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Monolithic Integration of Light Emitting Diodes, Photodetector and Receiver Circuit in Standard CMOS Technology 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
Authors:  Huang BJ;  Xu Zhang;  Zan Dong;  Wei Wang;  Chen HD;  Huang, BJ, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China.
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Silicon  
抗辐照SOS-CMOS集成电路 成果
1987
Accomplishers:  刘忠立;  和致经;  郁元桓;  昝育德;  茅冬生
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抗辐照  
一种利用半导体照明进行通信的系统及方法 专利
专利类型: 发明, 专利号: CN200910081993.9, 公开日期: 2011-08-30
Inventors:  陈弘达;  朱琳;  陈雄斌;  裴为华;  刘博;  杨宇;  董赞;  关宁
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