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Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors 期刊论文
Journal of Applied Physics, 2016, 卷号: 119, 期号: 10, 页码: 105304
Authors:  Y. F. Lao;  A. G. U. Perera;  H. L. Wang;  J. H. Zhao;  Y. J. Jin;  D. H. Zhang
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Evolution of InAs/GaAs(001) islands during the two- to three-dimensional growth mode transition in molecular-beam epitaxy 期刊论文
NANOTECHNOLOGY, 2007, 卷号: 18, 期号: 16, 页码: Art.No.165301
Authors:  Wu, J (Wu, J.);  Jin, P (Jin, P.);  Jiao, YH (Jiao, Y. H.);  Lv, XJ (Lv, X. J.);  Wang, ZG (Wang, Z. G.);  Wu, J, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wuju@red.semi.ac.cn
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Assembled Quantum Dots  
Molecular beam epitaxy InAs dot arrays on InGaAs/GaAs 期刊论文
NANOTECHNOLOGY, 2006, 卷号: 17, 期号: 23, 页码: 5846-5850
Authors:  Jiao YH (Jiao Y. H.);  Wu J (Wu J.);  Xu B (Xu B.);  Jin P (Jin P.);  Hu LJ (Hu L. J.);  Liang LY (Liang L. Y.);  Ren YY (Ren Y. Y.);  Wang ZG (Wang Z. G.);  Jiao, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Chemical-vapor-deposition  Field-effect Transistors  Quantum-dots  Self-organization  Islands  Nanostructures  Superlattices  Growth  Surface  Gaas(100)  
MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 卷号: 35, 期号: 1, 页码: 194-198
Authors:  Jiao YH (Jiao Y. H.);  Wu J (Wu J.);  Xu B (Xu B.);  Jin P (Jin P.);  Hu LJ (Hu L. J.);  Liang LY (Liang L. Y.);  Wang ZG (Wang Z. G.);  Jiao, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: jiaoyuheng@mail.semi.ac.cn
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Metamorphic  Long Wavelength  Quantum Dots  Molecular Beam Epitaxy  Molecular-beam Epitaxy  Chemical-vapor-deposition  1.3 Mu-m  Gaas  Emission  Range  Islands  Arrays  Lasers  
基于二维表面等离子体激元的微结构 期刊论文
固体电子学研究与进展, 2002, 卷号: 22, 期号: 4, 页码: 476-478
Authors:  章蓓;  栾峰;  徐军;  金艳波;  徐万劲;  张会珍;  钱怡;  马骁宇;  朱恪;  刘玉龙
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InGaAsP/InP MQW电流控制型双稳/非线性增益开关激光器 期刊论文
半导体学报, 1996, 卷号: 17, 期号: 11, 页码: 813
Authors:  张权生;  石志文;  杜云;  颜学进;  赵军
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三端1.3μm InGaAsP/Inp双区共腔激光器 期刊论文
高技术通讯, 1996, 卷号: 6, 期号: 7, 页码: 27
Authors:  张权生;  石志文;  杜云;  赵军;  颜学进
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氮化镓基3D垂直结构发光二极管的结构 专利
专利类型: 发明, 公开日期: 2013-03-13, 2013-03-13
Inventors:  谢海忠;  张扬;  杨华;  李璟;  刘志强;  伊晓燕;  王军喜;  王国宏;  李晋闽
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氮化镓基3D垂直结构发光二极管的制作方法 专利
专利类型: 发明, 公开日期: 2013-03-13, 2013-03-13
Inventors:  谢海忠;  张扬;  杨华;  李璟;  刘志强;  伊晓燕;  王军喜;  王国宏;  李晋闽
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一种提高OFDM系统中符号同步精度的方法 专利
专利类型: 发明, 公开日期: 2014-04-30
Inventors:  彭锦;  周立国;  姚小城;  崔秀伶;  方治;  鉴海防;  石寅
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