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Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor 期刊论文
NATURE COMMUNICATIONS, 2017, 卷号: 8, 期号: 1, 页码: 970
Authors:  Xiao-Xi Li;  Zhi-Qiang Fan;  Pei-Zhi Liu;  Mao-Lin Chen;  Xin Liu;  Chuan-Kun Jia;  Dong-Ming Sun;  Xiang-Wei Jiang;  Zheng Han;  Vincent Bouchiat;  Jun-Jie Guo;  Jian-Hao Chen;  Zhi-Dong Zhang
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低介电常数BCB树脂的固化方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-13, 2010-08-12
Inventors:  程远兵;  周 帆;  潘教青;  陈娓兮;  王 圩
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A Selective-Area Metal Bonding InGaAsP-Si Laser 期刊论文
IEEE PHOTONICS TECHNOLOGY LETTERS, 2010, 卷号: 22, 期号: 15, 页码: 1141-1143
Authors:  Hong T (Hong Tao);  Ran GZ (Ran Guang-Zhao);  Chen T (Chen Ting);  Pan JQ (Pan Jiao-Qing);  Chen WX (Chen Wei-Xi);  Wang Y (Wang Yang);  Cheng YB (Cheng Yuan-Bing);  Liang S (Liang Song);  Zhao LJ (Zhao Ling-Juan);  Yin LQ (Yin Lu-Qiao);  Zhang JH (Zhang Jian-Hua);  Wang W (Wang Wei);  Qin GG (Qin Guo-Gang);  Hong, T, Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China. E-mail Address: qingg@pku.edu.cn
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Ingaasp-si Laser  Selective-area Metal Bonding (Samb)  Si Photonics  
Stress reduction in GaN films on (111) silicon-on-insulator substrate grown by metal-organic chemical vapor deposition 期刊论文
MATERIALS LETTERS, 2007, 卷号: 61, 期号: 22, 页码: 4416-4419
Authors:  Sun JY (Sun Jiayin);  Chen J (Chen Jing);  Wang X (Wang Xi);  Wang JF (Wang Jianfeng);  Liu W (Liu Wei);  Zhu JJ (Zhu Jianjun);  Yang H (Yang Hui);  Sun, JY, No 865,Changning Rd, Shanghai 200050, Peoples R China. 电子邮箱地址: jiayinsun@mail.sim.ac.cn
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Chemical Vapor Deposition  
Broad-band semiconductor optical amplifiers 期刊论文
JOURNAL OF LUMINESCENCE, 2007, 卷号: 122 Sp.Iss.SI, 期号: 0, 页码: 208-211
Authors:  Ding Y (Ding Ying);  Kan Q (Kan Qiang);  Wang JL (Wang Jun-ling);  Pan JQ (Pan Jiao-qing);  Zhou F (Zhou Fan);  Chen WX (Chen Wei-xi);  Wang W (Wang Wei);  Ding, Y, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: yingding@red.semi.ac.cn;  wy_9992000@163.com
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Semiconductor Optical Amplifiers (Soas)  
Improving the optical profile of electroabsorption modulator using single-sided large optical cavity structure 期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 5, 页码: 2751-2755
Authors:  Yang H (Yang Hua);  Zhu HL (Zhu Hong-Liang);  Pan JQ (Pan Jiao-Qing);  Feng W (Feng Wen);  Xie HY (Xie Hong-Yun);  Zhou F (Zhou Fan);  An X (An Xin);  Bian J (Bian Jing);  Zhao LJ (Zhao Ling-Juan);  Chen WX (Chen Wei-Xi);  Wang W (Wang Wei);  Yang, H, Chinese Acad Sci, Inst Semicond, Natl Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: yanghua@red.semi.ac.cn
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Single-side Large Optical Cavity  
Unselective regrowth buried heterostructure long-wavelength superluminescent diode realized with MOVPE 期刊论文
JOURNAL OF LUMINESCENCE, 2007, 卷号: 122 Sp.Iss.SI, 期号: 0, 页码: 176-178
Authors:  Ding Y (Ding Ying);  Zhou F (Zhou Fan);  Chen WX (Chen Wei-xi);  Wang W (Wang Wei);  Ding, Y, Hokkaido Univ, Res Ctr Integrated Quantum Elect, Kita Ku, N13,W8, Sapporo, Hokkaido 0608628, Japan. 电子邮箱地址: yingding@red.semi.ac.cn
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Buried Heterostructure (Bh)  
基于薄膜SOI材料的GaN外延生长应力释放机制 期刊论文
功能材料与器件学报, 2007, 卷号: 13, 期号: 4, 页码: 367-370
Authors:  孙佳胤;  陈静;  王曦;  王建峰;  刘卫;  朱建军;  杨辉
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采用单边大光腔结构改善电吸收调制器的光场分布 期刊论文
物理学报, 2007, 卷号: 56, 期号: 5, 页码: 2751-2755
Authors:  杨华;  朱洪亮;  潘教青;  冯文;  谢红云;  周帆;  安欣;  边静;  赵玲娟;  陈娓兮;  王圩
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具有波长蓝移效应的掩埋异质结构半导体光器件及方法 专利
专利类型: 发明, 申请日期: 2006-12-06, 公开日期: 2009-06-04, 2009-06-11
Inventors:  丁颖;  王圩;  潘教青;  王宝军;  陈娓兮
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