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A Selective-Area Metal Bonding InGaAsP-Si Laser
Hong T (Hong Tao); Ran GZ (Ran Guang-Zhao); Chen T (Chen Ting); Pan JQ (Pan Jiao-Qing); Chen WX (Chen Wei-Xi); Wang Y (Wang Yang); Cheng YB (Cheng Yuan-Bing); Liang S (Liang Song); Zhao LJ (Zhao Ling-Juan); Yin LQ (Yin Lu-Qiao); Zhang JH (Zhang Jian-Hua); Wang W (Wang Wei); Qin GG (Qin Guo-Gang); Hong, T, Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China. E-mail Address: qingg@pku.edu.cn
2010
Source PublicationIEEE PHOTONICS TECHNOLOGY LETTERS
Volume22Issue:15Pages:1141-1143
AbstractA 1.55-mu m hybrid InGaAsP-Si laser was fabricated by the selective-area metal bonding method. Two Si blocking stripes, each with an excess-metals accommodated space, were used to separate the optical coupling area and the metal bonding areas. In such a structure, the air gap between the InGaAsP structure and Si waveguide has been reduced to be negligible. The laser operates with a threshold current density of 1.7 kA/cm(2) and a slope efficiency of 0.05 W/A under pulsed-wave operation. Room-temperature continuous lasing with a maximum output power of 0.45 mW is realized.
metadata_24国内
KeywordIngaasp-si Laser Selective-area Metal Bonding (Samb) Si Photonics
Subject Area半导体材料
Funding OrganizationThis work was supported by the National Natural Science Foundation of China (10874001, 50732001, 10674012, and 60877022) and by the National Basic Research Program of China (973 Program, 2007CB613402).
Indexed BySCI
Language英语
Date Available2010-10-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/13543
Collection中科院半导体材料科学重点实验室
Corresponding AuthorHong, T, Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China. E-mail Address: qingg@pku.edu.cn
Recommended Citation
GB/T 7714
Hong T ,Ran GZ ,Chen T ,et al. A Selective-Area Metal Bonding InGaAsP-Si Laser[J]. IEEE PHOTONICS TECHNOLOGY LETTERS,2010,22(15):1141-1143.
APA Hong T .,Ran GZ .,Chen T .,Pan JQ .,Chen WX .,...&Hong, T, Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China. E-mail Address: qingg@pku.edu.cn.(2010).A Selective-Area Metal Bonding InGaAsP-Si Laser.IEEE PHOTONICS TECHNOLOGY LETTERS,22(15),1141-1143.
MLA Hong T ,et al."A Selective-Area Metal Bonding InGaAsP-Si Laser".IEEE PHOTONICS TECHNOLOGY LETTERS 22.15(2010):1141-1143.
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