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N-type GaSb single crystals with high below-band gap transmission 期刊论文
Chinese Physics B, 2017, 卷号: 26, 期号: 10, 页码: 107801
Authors:  Yong-Biao Bai;  You-Wen Zhao;  Gui-Ying Shen;  Xiao-Yu Chen;  Jing-Ming Liu;  Hui Xie;  Zhi-Yuan Dong;  Jun Yang;  Feng-Yun Yang and Feng-Hua Wang
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Thermally induced native defect transform in annealed GaSb 期刊论文
Chinese Physics B, 2016, 卷号: 25, 期号: 7, 页码: 077801
Authors:  Jie Su;  Tong Liu;  Jing-Ming Liu;  Jun Yang;  Yong-Biao Bai;  Gui-Ying Shen;  Zhi-Yuan Dong;  Fang-Fang Wang;  You-Wen Zhao
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无权访问的条目 学位论文
Authors:  杨彪
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High-efficiency focusing grating coupler with optimized ultra-short taper 期刊论文
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 11, 页码: 114206
Authors:  Yang Biao;  Li Zhi-Yong;  Yu Yu-De;  Yu Jin-Zhong
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The progress of silicon-based grating couplers 期刊论文
Acta Physica Sinica, 2013, 卷号: 62, 期号: 18, 页码: 184214
Authors:  Yang Biao, Li Zhi-Yong, Xiao Xi, Nemkova Anastasia, Yu Jin-Zhong, Yu Yu-De
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High-efficiency focusing grating coupler for large-scale silicon photonic integration 期刊论文
2013 International Conference on Optoelectronics and Microelectronics, ICOM 2013, 2013, 页码: 160-162
Authors:  Biao Yang;  Zhi-Yong Li;  Xi Xiao;  Yu Jin-Zhong;  Yu Yu-De
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Broadband optical beam power splitter for wavelength dependent light circuits on silicon substrates 期刊论文
2013 International Conference on Optoelectronics and Microelectronics, ICOM 2013, 2013, 页码: 177-179
Authors:  Li, Zhiyong;  Xing, Jiejiang;  Yang, Biao;  Yu, Yude
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Design and Characterization of a Top Cladding for Silicon-on-Insulator Grating Coupler 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 11, 页码: 114213
Authors:  Anastasia N (Anastasia, Nemkova);  Xiao X (Xiao Xi);  Yang B (Yang Biao);  Chu T (Chu Tao);  Yu JZ (Yu Jin-Zhong);  Yu YD (Yu Yu-De)
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Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.50
Authors:  Shi K;  Li DB;  Song HP;  Guo Y;  Wang J;  Xu XQ;  Liu JM;  Yang AL;  Wei HY;  Zhang B;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  lidb@ciomp.ac.cn;  xlliu@semi.ac.cn
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Chemical-vapor-deposition  Core-level Photoemission  Sb-doped Sno2  Inn  Growth  Gan  Naxwo3  Alloys  Green  State  
A Theoretical Calculation of the Impact of GaN Cap and Al(x)Ga(1-x)N Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/Al(x)Ga(1-x)N/GaN Heterostructure 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 卷号: 58, 期号: 12, 页码: 4272-4275
Authors:  Liu GP (Liu Guipeng);  Wu J (Wu Ju);  Lu YW (Lu Yanwu);  Zhang BA (Zhang Biao);  Li CM (Li Chengming);  Sang L (Sang Ling);  Song YF (Song Yafeng);  Shi K (Shi Kai);  Liu XL (Liu Xianglin);  Yang SY (Yang Shaoyan);  Zhu QS (Zhu Qinsheng);  Wang ZG (Wang Zhanguo)
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