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AlxGa1-xN材料生长及MSM型紫外探测器制备研究 学位论文
, 北京: 中国科学院研究生院, 2012
Authors:  潘旭
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Alxga1-xn三元合金  高al组分  紫外探测器  金属有机物化学气相外延  Si基gan  
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
Authors:  Wei M;  Wang XL;  Pan X;  Xiao HL;  Wang CM;  Yang CB;  Wang ZG;  Wei, M (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. mengw@semi.ac.cn
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Chemical-vapor-deposition  Phase Epitaxy  Aln Interlayers  Films  Stress  Layers  Dislocations  Reduction  Density  Diodes  
Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate 会议论文
3RD INTERNATIONAL PHOTONICS AND OPTOELECTRONICS MEETINGS (POEM 2010), 276: Art. No. 012094 2011, Wuhan, PEOPLES R CHINA, NOV 02-05, 2010
Authors:  Wei M (Wei Meng);  Wang XL (Wang Xiaoliang);  Pan X (Pan Xu);  Xiao HL (Xiao Hongling);  Wang CM (Wang Cuimei);  Zhang ML (Zhang Minglan);  Wang ZG (Wang Zhanguo)
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Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 会议论文
JOURNAL OF CRYSTAL GROWTH, 318 (1): 464-467, Beijing, PEOPLES R CHINA, AUG 08-13, 2010
Authors:  Pan X (Pan Xu);  Wei M (Wei Meng);  Yang CB (Yang Cuibai);  Xiao HL (Xiao Hongling);  Wang CM (Wang Cuimei);  Wang XL (Wang Xiaoliang)
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Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 464-467
Authors:  Pan X;  Wei M;  Yang CB;  Xiao HL;  Wang CM;  Wang XL;  Pan, X, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100864, Peoples R China. xpan@semi.ac.cn
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Sandwich Structure  Stress  Aluminum Nitride  Gallium Nitride  Silicon  Phonon Deformation Potentials  Wurtzite Aln  Silicon  Stress  Transistors  Epitaxy  Layers  
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 4, 页码: Article no.48102
Authors:  Wei M;  Wang XL;  Xiao HL;  Wang CM;  Pan X;  Hou QF;  Wang ZG;  Wei, M, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China. mengw@semi.ac.cn
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Electron-mobility Transistors  Al-content  Stress-control  Phase Epitaxy  Algan  Buffer  Layers  Heterostructures  Interlayers  Silicon  
在大失配衬底上生长表面无裂纹的GaN薄膜的方法 专利
专利类型: 发明, 专利号: CN201010128376.2, 公开日期: 2011-08-31
Inventors:  魏萌;  王晓亮;  潘旭;  李建平;  刘宏新;  王翠梅;  肖红领
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