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低密度InAs/GaAs量子点生长及其单光子源器件工艺研究 学位论文
, 北京: 中国科学院研究生院, 2013
Authors:  李密锋
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单光子源  自组织量子点  低密度  耦合  分子束外延  梯度分布  微区光谱  微柱形微腔  
In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots 期刊论文
Nanoscale Research Letters, 2013, 卷号: 8, 期号: 1, 页码: 86
Authors:  Li MF(李密锋)
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Inas Quantum Dots  Sacrificed Inas Layer  Molecular Beam Epitaxy  Reflection High-energy Electron  
低密度 InAs/GaAs 量子点生长及其单光子源器件工艺研究 学位论文
, 北京: 中国科学院研究生院, 2013
Authors:  李密锋
Adobe PDF(6832Kb)  |  Favorite  |  View/Download:710/43  |  Submit date:2013/06/20
GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications 期刊论文
NANOSCALE RESEARCH LETTERS, 2013, 卷号: 8, 页码: 218
Authors:  Li, Jie;  Guo, Hao;  Liu, Jun;  Tang, Jun;  Ni, Haiqiao;  Shi, Yunbo;  Xue, Chenyang;  Niu, Zhichuan;  Zhang, Wendong;  Li, Mifeng;  Yu, Ying
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Strain-driven synthesis of self-catalyzed branched GaAs nanowires 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 16, 页码: 163115
Authors:  Zha, Guowei;  Li, Mifeng;  Yu, Ying;  Wang, Lijuan;  Xu, Jianxing;  Shang, Xiangjun;  Ni, Haiqiao;  Niu, Zhichuan
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Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots 期刊论文
Semiconductor Science and Technology, 2012, 卷号: 27, 期号: 11, 页码: 115010
Authors:  Wang, Lijuan;  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Yu, Ying;  Zha, Guowei;  Ni, Haiqiao;  Niu, Zhichuan
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Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application 期刊论文
MATERIALS, 2012, 卷号: 5, 期号: 12, 页码: 2917-2926
Authors:  Shi YB (Shi, Yunbo);  Guo H (Guo, Hao);  Ni HQ (Ni, Haiqiao);  Xue CY (Xue, Chenyang);  Niu ZC (Niu, Zhichuan);  Tang J (Tang, Jun);  Liu J (Liu, Jun);  Zhang WD (Zhang, Wendong);  He JF (He, Jifang);  Li MF (Li, Mifeng);  Yu Y (Yu, Ying)
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Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 卷号: 27, 期号: 11, 页码: 115010
Authors:  Wang LJ (Wang, Lijuan);  He JF (He, Jifang);  Shang XJ (Shang, Xiangjun);  Li MF (Li, Mifeng);  Yu Y (Yu, Ying);  Zha GW (Zha, Guowei);  Ni HQ (Ni, Haiqiao);  Niu ZC (Niu, Zhichuan)
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Molecular beam epitaxy growth of GaAs on an offcut Ge substrate 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 1, 页码: Article no.18102
Authors:  He JF;  Niu ZC;  Chang XY;  Ni HQ;  Zhu Y;  Li MF;  Shang XJ;  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
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Molecular Beam Epitaxy  Anti-phase Domain  Gaas/ge Interface  Chemical Vapor-deposition  Junction Solar-cells  Domain-free Growth  Temperature  Quality  Future  
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004
Authors:  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Zhu, Yan;  Chang, Xiuying;  Ni, Haiqiao;  Xu, Yingqiang;  Niu, Zhichuan;  He, J.(
Adobe PDF(3956Kb)  |  Favorite  |  View/Download:947/333  |  Submit date:2012/06/14
Atomic Force Microscopy  Buffer Layers  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Germanium  Growth Temperature  High Resolution Transmission Electron Microscopy  Molecular Beam Epitaxy  Molecular Beams  Semiconducting Gallium  Semiconductor Device Structures  Semiconductor Quantum Wells