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制备网状纳米阵列铁磁性薄膜的物理气相沉积方法 专利
专利类型: 发明, 申请日期: 2007-12-19, 公开日期: 2009-06-04, 2009-06-11
Inventors:  戴瑞烜;  陈诺夫;  彭长涛;  王鹏
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具有布拉格反射器的n+/p型高抗辐照GaAs太阳电池 专利
专利类型: 发明, 申请日期: 2007-04-04, 公开日期: 2009-06-04, 2009-06-11
Inventors:  白一鸣;  陈诺夫;  戴瑞烜;  王鹏;  王晓东
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Net-like ferromagnetic MnSb film deposited on porous silicon substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 299, 期号: 1, 页码: 142-145
Authors:  Dai RX (Dai Ruixuan);  Chen NF (Chen NuoFu);  Zhang XW (Zhang X. W.);  Peng CT (Peng, Changtao);  Dai, RX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: rxdai@red.semi.ac.cn
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Physical Vapor Deposition Processes  
On the formation of well-aligned ZnO nanowall networks by catalyst-free thermal evaporation method 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 305, 期号: 1, 页码: 296-301
Authors:  Yin ZG (Yin Zhigang);  Chen NF (Chen Nuofu);  Dai RX (Dai Ruixuan);  Liu L (Liu Lei);  Zhang XW (Zhang Xingwang);  Wang XH (Wang Xiaohui);  Wu JL (Wu Jinliang);  Chai CL (Chai Chunlin);  Yin, ZG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: yzhg@semi.ac.cn
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Nanostructures  
多孔硅基MnSb铁磁性薄膜和Y2O3:Eu的制备及性质研究 学位论文
, 北京: 中国科学院半导体研究所, 2007
Authors:  戴瑞烜
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Ferromagnetic MnSb Films Consisting of Nanorods and Nanoleaves 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 5, 页码: 661-664
Authors:  Dai Ruixuan;  Chen Nuofu;  Zhang Xingwang;  Peng Changtao;  Wu Jinliang
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p-type Zn1-xMgxO films with Sb doping by radio-frequency magnetron sputtering 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 20, 页码: Art.No.202102
Authors:  Wang P (Wang Peng);  Chen NF (Chen Nuofu);  Yin ZG (Yin Zhigang);  Dai RX (Dai Ruixuan);  Bai YM (Bai Yiming);  Wang, P, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: pwang@semi.ac.cn
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Zno Thin-films  Mgxzn1-xo  Devices  Alloy  
As-doped p-type ZnO films by sputtering and thermal diffusion process 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 4, 页码: Art.No.043704
Authors:  Wang P (Wang Peng);  Chen NF (Chen Nuofu);  Yin ZG (Yin Zhigang);  Yang F (Yang Fei);  Peng CT (Peng Changtao);  Dai RX (Dai Ruixuan);  Bai YM (Bai Yiming);  Wang, P, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: pwang@semi.ac.cn
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Ray-photoelectron-spectroscopy  Inas Surfaces  Fabrication  Deposition  Layers  Oxide