SEMI OpenIR
(Note: the search results are based on claimed items)

Browse/Search Results:  1-4 of 4 Help

Filters        
Selected(0)Clear Items/Page:    Sort:
Surface acoustic wave velocity and electromechanical coupling coefficient of GaN grown on (0001) sapphire by metal-organic vapour phase epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2001, 卷号: 18, 期号: 10, 页码: 1418-1419
Authors:  Chen Z;  Lu DC;  Wang XH;  Liu XL;  Han PD;  Yuan HR;  Wang D;  Wang ZG;  He ST;  Li HL;  Yan L;  Chen XY;  Chen Z,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(237Kb)  |  Favorite  |  View/Download:1299/414  |  Submit date:2010/08/12
Thin-films  Deposition  Diodes  
Growth and characterization of GaN on LiGaO2 and LiAlO2 会议论文
BLUE LASER AND LIGHT EMITTING DIODES II, CHIBA, JAPAN, SEP 29-OCT 02, 1998
Authors:  Duan SK;  Teng XG;  Han PD;  Lu DC;  Duan SK Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab Beijing 100083 Peoples R China.
Favorite  |  View/Download:546/0  |  Submit date:2010/10/29
Diodes  
Growth and characterization of GaN on LiGaO2 会议论文
JOURNAL OF CRYSTAL GROWTH, 195 (1-4), LA JOLLA, CALIFORNIA, MAY 31-JUN 04, 1998
Authors:  Duan SK;  Teng XG;  Han PD;  Lu DC;  Duan SK Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab Beijing 100083 Peoples R China. 电子邮箱地址: skduan@red.semi.ac.cn
Adobe PDF(161Kb)  |  Favorite  |  View/Download:732/205  |  Submit date:2010/11/15
Diodes  
Growth and characterization of GaN on LiGaO2 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1998, 卷号: 195, 期号: 1-4, 页码: 304-308
Authors:  Duan SK;  Teng XG;  Han PD;  Lu DC;  Duan SK,Chinese Acad Sci,Inst Semicond,Natl Integrated Optoelect Lab,Beijing 100083,Peoples R China. 电子邮箱地址: skduan@red.semi.ac.cn
Adobe PDF(161Kb)  |  Favorite  |  View/Download:815/289  |  Submit date:2010/08/12
Movpe  Gan  Substrate  Diodes