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Temperature dependence of surface quantum dots grown under frequent growth interruption 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 卷号: 33, 期号: 1, 页码: 207-210
Authors:  Yu LK;  Xu B;  Wang ZG;  Chen YH;  Jin P;  Zhao C;  Sun J;  Ding F;  Hu LJ;  Yu, LK, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yulike@red.semi.ac.cn
Adobe PDF(164Kb)  |  Favorite  |  View/Download:1020/354  |  Submit date:2010/04/11
Growth Interruption  In Segregation  Surface Oxide  Molecular Beam Epitaxy  Quantum Dots  Molecular-beam Epitaxy  Gaas  Photoluminescence  Layer  Shape  Size  
Size evolution and optical properties of self-assembled InAs quantum dots on different matrix 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 卷号: 19, 期号: 3, 页码: 292-297
Authors:  He J;  Xu B;  Wang ZG;  Qu SC;  Liu FQ;  Zhu TW;  He J,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(247Kb)  |  Favorite  |  View/Download:842/233  |  Submit date:2010/08/12
Self-assembled  Mbe  Quantum Dots  Photoluminescence  1.3 Mu-m  Temperature-dependence  Excited-states  Inxga1-xas  Lasers  Inp