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An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 卷号: 489, 期号: 2, 页码: 461-464
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Wang H;  Liu ZS;  Zhang SM;  Wang YT;  Jia QJ;  Yang H;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address:
Adobe PDF(418Kb)  |  Favorite  |  View/Download:1692/452  |  Submit date:2010/04/04
Nitride Materials  Crystal Growth  X-ray Diffraction  Time-resolved Photoluminescence  Light-emitting-diodes  Piezoelectric Fields  Laser-diodes  Dependence  Recombination  Polarization  Dynamics  Growth  Mocvd  
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 4, 页码: Art. No. 041901
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Wang H;  Zhang SM;  Wang YT;  Yang H;  Zhao DG Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address:
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Edge Dislocations  Gallium Compounds  Iii-v Semiconductors  Impurities  Photoluminescence  Semiconductor Doping  Semiconductor Thin Films  Silicon  Wide Band Gap Semiconductors  X-ray Diffraction