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Strong red light emission from silicon nanocrystals embedded in SIO2 matrix 会议论文
COMMAD 2002 PROCEEDINGS, SYDNEY, AUSTRALIA, DEC 11-13, 2002
作者:  Chen WD;  Wang YQ;  Chen CY;  Diao HW;  Liao XB;  Kong GL;  Hsu CC;  Chen WD Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(265Kb)  |  收藏  |  浏览/下载：1274/291  |  提交时间：2010/10/29
Photoluminescence  Luminescence  Spectroscopy  Deposition  
Optical study of electronic states in GaAsN 会议论文
COMMAD 2002 PROCEEDINGS, SYDNEY, AUSTRALIA, DEC 11-13, 2002
作者:  Luo XD;  Yang CL;  Huang JS;  Xu ZY;  Liu J;  Ge WK;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Luo XD Chinese Acad Sci Inst Semicond NLSM Beijing 100083 Peoples R China.
Adobe PDF(188Kb)  |  收藏  |  浏览/下载：1480/265  |  提交时间：2010/10/29
Molecular-beam Epitaxy  Temperature Photoluminescence  Quantum-well  Alloys  Relaxation  Gaas1-xnx  
Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Chen CY;  Chen WD;  Song SF;  Hsu CC;  Chen CY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(726Kb)  |  收藏  |  浏览/下载：1093/182  |  提交时间：2010/11/15
Hydrogenated Amorphous-silicon  Photoluminescence  Luminescence  Intensity  System  
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001
作者:  Zhao YW;  Sun NF;  Dong HW;  Jiao JH;  Zhao JQ;  Sun TN;  Lin LY;  Sun NF Hebei Semicond Res Inst POB 179-40 Shijiazhuang 050002 Hebei Peoples R China.
Adobe PDF(179Kb)  |  收藏  |  浏览/下载：1601/289  |  提交时间：2010/11/15
Indium Phosphide  Semi-insulating  Annealing  Picts  Photoluminescence  Semiinsulating Inp  Indium-phosphide  Fe  Photoluminescence  Temperature  
Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001
作者:  Kang JY;  Shen YW;  Wang ZG;  Kang JY Xiamen Univ Dept Phys Xiamen 361005 Peoples R China.
Adobe PDF(133Kb)  |  收藏  |  浏览/下载：1199/238  |  提交时间：2010/11/15
Defects  Gan  Photoluminescence  Electronic Structures  Yellow Luminescence  Epitaxial-films  Mg