中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共6条，第1-6条 帮助

限定条件        
已选(0)清除 条数/页：   排序方式：
A novel high sensitivity CE-PTHPT for optical fiber communication 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Guohui L;  Yang R;  Dejun H;  Chengzhou J;  Shucheng D;  Eenjun Z;  YiPing Z;  Junming Z;  Guohui L Beijing Normal Univ Inst Low Energy Nucl Phys Key Lab Beam Technol & Mat Modificat Beijing 100875 Peoples R China.
Adobe PDF(58Kb)  |  收藏  |  浏览/下载：1291/351  |  提交时间：2010/10/29
Phototransistors  Optical Fiber Communication  Gaas  Inp  Heterojunction Phototransistor  High-gain  
Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文
PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2, KANAZAWA, JAPAN, MAY 27-31, 2001
作者:  Niu ZC;  Wang XD;  Miao ZH;  Lan Q;  Kong YC;  Zhou DY;  Feng SL;  Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1212/0  |  提交时间：2010/10/29
Molecular Beam Epitaxy  Ingaas Islands  Photolumineseence  Line-width  1.3 Mu-m  Inas/gaas Quantum Dots  Optical-properties  Cap Layer  Gaas  Luminescence  Strain  
Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Li LH;  Pan Z;  Zhang W;  Lin YW;  Wang XY;  Wu RH;  Li LH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(109Kb)  |  收藏  |  浏览/下载：1381/268  |  提交时间：2010/11/15
Characterization  Defects  X-ray Diffraction  Molecular Beam Epitaxy  Nitrides  Gaas  
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Liu HY;  Xu B;  Ding D;  Chen YH;  Zhang JF;  Wu J;  Wang ZG;  Liu HY Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(222Kb)  |  收藏  |  浏览/下载：1271/319  |  提交时间：2010/11/15
Low Dimensional Structures  Molecular Beam Epitaxy  Nanomaterials  Inas Islands  Gaas  Growth  Gaas(100)  Thickness  Density  
Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Niu ZC;  Wang XD;  Miao ZH;  Feng SL;  Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(171Kb)  |  收藏  |  浏览/下载：1154/221  |  提交时间：2010/11/15
Crystal Morphology  Quantum Dots  Molecular Beam Epitaxy  Semiconducting Gallium Arsenide  Semiconducting Indium Gallium Arsenide  1.35 Mu-m  Gaas-surfaces  Photoluminescence  Islands  
Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots 会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 223 (1), SAPPORO, JAPAN, SEP 24-28, 2000
作者:  Li GH;  Chen Y;  Fung ZL;  Ding K;  Han HX;  Zhou W;  Wang ZG;  Li GH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(165Kb)  |  收藏  |  浏览/下载：1248/322  |  提交时间：2010/11/15
Hydrostatic-pressure  Photoluminescence  Gaas  Luminescence  Growth  Insb  Gasb