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Self-consistent analysis of AlSb/InAs high electron mobility transistor structures 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 4, 页码: Art. No. 044504
Authors:  Li YB (Li Yanbo);  Zhang Y (Zhang Yang);  Zeng YP (Zeng Yiping);  Li, YB, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address:;
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Inas/alsb Quantum-wells  Low-power Applications  Hemts  Modulation  Heterostructures  Technology  Channel  Voltage  Mass  
First-principles study on the structural and electronic properties of ultrathin ZnO nanofilms 期刊论文
PHYSICS LETTERS A, 374 (8): 1054-1058 FEB 8 2010, 2010, 卷号: 374, 期号: 8, 页码: 1054-1058
Authors:  Kang J (Kang Jun);  Zhang Y (Zhang Yang);  Wen YH (Wen Yu-Hua);  Zheng JC (Zheng Jin-Cheng);  Zhu ZZ (Zhu Zi-Zhong);  Wen, YH, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China. E-mail Address:;;
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First-principles Calculations  Zno Nanofilms  Electronic Properties  Quantum Effects  Nanobelts  Nanorings  Wurtzite  Energy  
锑化物超晶格红外探测器的研究进展 期刊论文
固体电子学研究与进展, 2010, 卷号: 30, 期号: 1, 页码: 40864
Authors:  李彦波;  刘超;  张杨;  赵杰;  曾一平
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An efficient dose-compensation method for proximity effect correction 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 8, 页码: 86001-1-86001-4
Authors:  Wang Ying;  Han Weihua;  Yang Xiang;  Zhang Renping;  Zhang Yang;  Yang Fuhua
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