Browse/Search Results:  1-8 of 8 Help

Selected(0)Clear Items/Page:    Sort:
Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell 期刊论文
Physica B: Condensed Matter, 2013, 卷号: 414, 页码: 110-114
Authors:  Li, Zhidong;  Xiao, Hongling;  Wang, Xiaoliang;  Wang, Cuimei;  Deng, Qingwen;  Jing, Liang;  Ding, Jieqin;  Hou, Xun
Adobe PDF(621Kb)  |  Favorite  |  View/Download:521/150  |  Submit date:2014/04/28
Enhanced performance of InGaN/GaN multiple quantum well solar cells with patterned sapphire substrate 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 12, 页码: 124004
Authors:  Jing, Liang;  Xiao, Hongling;  Wang, Xiaoliang;  Wang, Cuimei;  Deng, Qingwen;  Li, Zhidong;  Ding, Jieqin;  Wang, Zhanguo;  Hou, Xun
Adobe PDF(286Kb)  |  Favorite  |  View/Download:398/78  |  Submit date:2014/04/28
The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 11, 页码: 113002
Authors:  Liang, Jing;  Hongling, Xiao;  Xiaoliang, Wang;  Cuimei, Wang;  Qingwen, Deng;  Zhidong, Li;  Jieqin, Ding;  Zhanguo, Wang;  Xun, Hou
Adobe PDF(217Kb)  |  Favorite  |  View/Download:329/107  |  Submit date:2014/04/30
Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 10, 页码: 104002
Authors:  Xiaojia, Wan;  Xiaoliang, Wang;  Hongling, Xiao;  Chun, Feng;  Lijuan, Jiang;  Shenqi, Qu;  Zhanguo, Wang;  Xun, Hou
Adobe PDF(282Kb)  |  Favorite  |  View/Download:462/159  |  Submit date:2014/05/16
A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文
Applied Physics Letters, 2012, 卷号: 101, 期号: 18, 页码: 182102
Authors:  Ding, Jieqin;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Chen, Hong;  Bi, Yang;  Deng, Qinwen;  Zhang, Jingwen;  Hou, Xun
Adobe PDF(1209Kb)  |  Favorite  |  View/Download:772/186  |  Submit date:2013/04/19
Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 8, 页码: 83003
Authors:  Bi, Yang;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai;  Peng, Enchao;  Lin, Defeng;  Feng, Chun;  Jiang, Lijuan,;  Bi, Y.(
Adobe PDF(324Kb)  |  Favorite  |  View/Download:1008/370  |  Submit date:2012/06/14
Aluminum  Electron Mobility  Gallium Nitride  High Electron Mobility Transistors  Indium  Poisson Equation  Polarization  Two Dimensional Electron Gas  
The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文
Applied Physics A: Materials Science and Processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
Authors:  Bi, Yang;  Wang, XiaoLiang;  Yang, CuiBai;  Xiao, HongLing;  Wang, CuiMei;  Peng, EnChao;  Lin, DeFeng;  Feng, Chun;  Jiang, LiJuan,;  Bi, Y.(
Adobe PDF(385Kb)  |  Favorite  |  View/Download:1247/296  |  Submit date:2012/06/14
Poisson Equation  
High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 3, 页码: 33002
Authors:  Yin, Haibo;  Wang, Xiaoliang;  Ran, Junxue;  Hu, Guoxin;  Zhang, Lu;  Xiao, Hongling;  Li, Jing;  Li, Jinmin;  Yin, H.(
Adobe PDF(1040Kb)  |  Favorite  |  View/Download:956/232  |  Submit date:2012/06/14
Epitaxial Growth  Gallium Nitride