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The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 7, 页码: Article no.71914
Authors:  Zhou GY;  Chen YH;  Yu JL;  Zhou XL;  Ye XL;  Jin P;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
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Spectroscopy  
Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 12, 页码: Article no.122104
Authors:  Yin CM;  Tang N;  Zhang S;  Duan JX;  Xu FJ;  Song J;  Mei FH;  Wang XQ;  Shen B;  Chen YH;  Yu JL;  Ma H;  Yin, CM, Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop, Beijing 100871, Peoples R China. ntang@pku.edu.cn;  bshen@pku.edu.cn
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Improved performance of GaAs-based micro-solar cell with novel polyimide/SiO2/TiAu/SiO2 structure 期刊论文
SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2011, 卷号: 54, 期号: 4, 页码: 830-834
Authors:  Bai YM;  Wang J;  Wang Y;  Zhang H;  Chen NF;  Yao JX;  Huang TM;  Wang YS;  Zhang XW;  Wu JL;  Bai, YM, N China. Elect Power Univ, New & Renewable Energy Beijing Key Lab, Beijing 102206, Peoples R China. ymbai@semi.ac.cn
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Micro-solar Cell  Si-gaas  Leakage Current  Insulating Layer  Perimeter Recombination  
Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 23, 页码: Art. No. 232116
Authors:  Jiang CY;  Chen YH;  Ma H;  Yu JL;  Liu Y
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Optical-properties  Dots  
Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 5, 页码: Article no.53519
Authors:  Yu JL;  Chen YH;  Jiang CY;  Liu Y;  Ma H;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
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Molecular-beam Epitaxy  Inversion Asymmetry  Heterostructures  Segregation  Interface  
Ratchet effect induced by linearly polarized near- and mid-infrared radiation in InAs nanowires patterned quasi two-dimensional electron system 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 3, 页码: 32106
Authors:  Jiang CY;  Ma H;  Yu JL;  Liu Y;  Chen YH;  Jiang, CY (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China, cyjiang@semi.ac.cn;  yhchen@semi.ac.cn
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Quantum Wires  Optical-properties  Rectification  Fluctuations