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Defect influence on luminescence efficiency of GaN-based LEDs 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Li SP (Li Shuping);  Fang ZL (Fang Zhilai);  Chen HY (Chen Hangyang);  Li JC (Li Jinchai);  Chen XH (Chen Xiaohong);  Yuan XL (Yuan Xiaoli);  Sekiguchi T (Sekiguchi Takashi);  Wang QM (Wang Qiming);  Kang JY (Kang Junyong);  Kang, JY, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China. 电子邮箱地址: jykang@xmu.edu.cn
Adobe PDF(142Kb)  |  收藏  |  浏览/下载：1384/288  |  提交时间：2010/03/29
Defects  
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 会议论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, Beijing, PEOPLES R CHINA, SEP 13-19, 2005
作者:  Sun, GS (Sun, G. S.);  Liu, XF (Liu, X. F.);  Gong, QC (Gong, Q. C.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Li, JY (Li, J. Y.);  Zeng, YP (Zeng, Y. P.);  Li, JM (Li, J. M.);  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: gshsun@red.semi.ac.cn
Adobe PDF(233Kb)  |  收藏  |  浏览/下载：1232/281  |  提交时间：2010/03/29
4h-sic