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High efficient GaN-based laser diodes with tunnel junction 期刊论文
Applied Physics Letters, 2013, 卷号: 103, 期号: 4, 页码: 043508
Authors:  M. X. Feng, J. P. Liu, S. M. Zhang, D. S. Jiang, Z. C. Li, K. Zhou, D. Y. Li, L. Q. Zhang, F. Wang, H. Wang, P. Chen, Z. S. Liu, D. G. Zhao, Q. Sun, H. Yang
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Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2013, 卷号: 372, 页码: 43-48
Authors:  Su, X. J.;  Xu, K.;  Ren, G. Q.;  Wang, J. F.;  Xu, Y.;  Zeng, X. H.;  Zhang, J. C.;  Cai, D. M.;  Zhou, T. F.;  Liu, Z. H.;  Yang, H.
Adobe PDF(1378Kb)  |  Favorite  |  View/Download:898/263  |  Submit date:2013/08/27