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Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy
Su, X. J.; Xu, K.; Ren, G. Q.; Wang, J. F.; Xu, Y.; Zeng, X. H.; Zhang, J. C.; Cai, D. M.; Zhou, T. F.; Liu, Z. H.; Yang, H.
2013
Source PublicationJOURNAL OF CRYSTAL GROWTH
Volume372Pages:43-48
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-08-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24266
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Su, X. J.,Xu, K.,Ren, G. Q.,et al. Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2013,372:43-48.
APA Su, X. J..,Xu, K..,Ren, G. Q..,Wang, J. F..,Xu, Y..,...&Yang, H..(2013).Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy.JOURNAL OF CRYSTAL GROWTH,372,43-48.
MLA Su, X. J.,et al."Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy".JOURNAL OF CRYSTAL GROWTH 372(2013):43-48.
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