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Structure and properties of InAs/AlAs quantum dots for broadband emission 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 10, 页码: Art. No. 103515
Authors:  Meng XQ (Meng X. Q.);  Jin P (Jin P.);  Liang ZM (Liang Z. M.);  Liu FQ (Liu F. Q.);  Wang ZG (Wang Z. G.);  Zhang ZY (Zhang Z. Y.);  Meng, XQ, Wuhan Univ, Key Lab Artificial Micro & Nano Struct, Minist Educ, Wuhan 430072, Peoples R China. mengxq@whu.edu.cn
Adobe PDF(226Kb)  |  Favorite  |  View/Download:1019/154  |  Submit date:2010/12/28
Chemical-vapor-deposition  
Effect of InAs quantum dots on the Fermi level pinning of undoped-n(+) type GaAs surface studied by contactless electroreflectance 期刊论文
JOURNAL OF APPLIED PHYSICS, 2003, 卷号: 93, 期号: 7, 页码: 4169-4172
Authors:  Jin P;  Meng XQ;  Zhang ZY;  Li CM;  Xu B;  Liu FQ;  Wang ZG;  Li YG;  Zhang CZ;  Pan SH;  Jin P,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China. 电子邮箱地址: pengjin@red.semi.ac.cn
Adobe PDF(132Kb)  |  Favorite  |  View/Download:1201/324  |  Submit date:2010/08/12
Franz-keldysh Oscillations  Microscopy  Islands  
Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer 期刊论文
JOURNAL OF APPLIED PHYSICS, 2002, 卷号: 92, 期号: 1, 页码: 511-514
Authors:  Zhang ZY;  Xu B;  Jin P;  Meng XQ;  Li CM;  Ye XL;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  1.3 Mu-m  Temperature-dependence  Growth  Gaas  Lasers