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Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well 期刊论文
JOURNAL OF APPLIED PHYSICS, 2013, 卷号: 113, 期号: 3, 页码: 033701
Authors:  Jin, Dong-Dong;  Jiang, Chao;  Li, Guo-Dong;  Zhang, Liu-Wan;  Yang, Tao;  Liu, Xiang-Lin;  Yang, Shao-Yan;  Zhu, Qin-Sheng;  Wang, Zhan-Guo
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Spin dependence of electron effective masses in InGaAs/InAlAs quantum well 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 6, 页码: 63707
Authors:  Wei LM;  Gao KH;  Liu XZ;  Zhou WZ;  Cui LJ;  Zeng YP;  Yu G;  Yang R;  Lin T;  Shang LY;  Guo SL;  Dai N;  Chu JH;  Austing DG;  Yu, G (reprint author), Shanghai Inst Tech Phys, Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China, yug@mai.sitp.ac.cn
Adobe PDF(1261Kb)  |  Favorite  |  View/Download:1189/214  |  Submit date:2012/01/06
2-dimensional Electrons  Band Nonparabolicity  Field  Heterostructures  Subband  Gas  Magnetotransport  
Geometrical-confinement effects on two electrons in elliptical quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2007, 卷号: 101, 期号: 6, 页码: Art.No.063714
Authors:  Liu YH (Liu Yong-Hui);  Yang FH (Yang Fu-Hua);  Feng SL (Feng Song-Lin);  Liu, YH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: liuyh@red.semi.ac.cn
Adobe PDF(205Kb)  |  Favorite  |  View/Download:856/261  |  Submit date:2010/03/29
Magnetic-field  
Photoluminescence behaviors from stoichiometric gadolinium oxide films 期刊论文
JOURNAL OF APPLIED PHYSICS, 2003, 卷号: 94, 期号: 7, 页码: 4414-4419
Authors:  Zhou JP;  Chai CL;  Yang SY;  Liu ZK;  Song SL;  Chen NF;  Lin LY;  Zhou JP,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(365Kb)  |  Favorite  |  View/Download:1138/387  |  Submit date:2010/08/12
Interfacial Layer Formation  Gate Dielectrics Gd2o3  Ion-beam  Temperature-dependence  Silicon  Si  Gaas(100)  Constants  Europium  Yttrium  
Investigation on anisotropy of vertical-cavity surface-emitting lasers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 5, 页码: 3102-3104
Authors:  Liu SA;  Lin SM;  Cheng P;  Zhang GB;  Wang QM;  Chen Y;  Li GH;  Han HX;  Liu SA,Chinese Acad Sci,Inst Semicond,Natl Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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Semiconductor Microcavities  Polariton Photoluminescence  Spontaneous Emission  Operation  Excitons  
Structural and optical properties of self-assembled InAs/GaAs quantum dots covered by InxGa1-xAs (0 <= x <= 0.3) 期刊论文
JOURNAL OF APPLIED PHYSICS, 2000, 卷号: 88, 期号: 6, 页码: 3392-3395
Authors:  Liu HY;  Wang XD;  Wu J;  Xu B;  Wei YQ;  Jiang WH;  Ding D;  Ye XL;  Lin F;  Zhang JF;  Liang JB;  Wang ZG;  Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(469Kb)  |  Favorite  |  View/Download:861/201  |  Submit date:2010/08/12
1.3 Mu-m  Molecular-beam Epitaxy  Room-temperature  Photoluminescence Linewidth  Emission  Lasers  Energy  
Enhanced hydrogen desorption from Si sites during low-temperature Si1-xGex growth by disilane and solid-Ge molecular beam epitaxy 期刊论文
JOURNAL OF APPLIED PHYSICS, 1999, 卷号: 85, 期号: 9, 页码: 6920-6922
Authors:  Liu JP;  Huang DD;  Li JP;  Lin YX;  Sun DZ;  Kong MY;  Liu JP,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Gas-source Mbe  Kinetics  Adsorption  Silicon  Si(100)  Mechanism  Si2h6  Phase  Films