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针对多模式逻辑单元可编程门阵列的工艺映射方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-02-24, 2010-08-12
Inventors:  张 琨;  周华兵;  陈陵都;  刘忠立
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一种利用稀盐酸选择腐蚀砷化铝制作空气隙结构的方法 专利
专利类型: 发明, 申请日期: 2009-06-17, 公开日期: 3998
Inventors:  李文兵;  韩 勤;  秦 龙;  杨晓红;  倪海乔;  杜 云;  朱 彬;  鞠研玲
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倒装双结铟镓氮太阳能电池结构 专利
专利类型: 发明, 申请日期: 2009-02-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王晓亮;  杨翠柏;  肖红领;  胡国新;  冉学军;  王翠梅;  张小宾;  李晋闽
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The bipolar doping of ZnS via native defects and external dopants 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 11, 页码: Art. No. 113704
Authors:  Gai YQ;  Li JB;  Yao B;  Xia JB;  Gai YQ Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China. E-mail Address:
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Augmented-wave Method  P-type Zno  Point-defects  Ii-vi  Nitrogen  Semiconductors  1st-principles  Compensation  Enhancement  
Electronic structures and mechanical properties of uranium monocarbide from first-principles LDA plus U and GGA plus U calculations 期刊论文
PHYSICS LETTERS A, 2009, 卷号: 373, 期号: 39, 页码: 3577-3581
Authors:  Shi HL;  Zhang P;  Li SS;  Sun B;  Wang BT;  Zhang P Inst Appl Phys & Computat Math LCP POB 8009 Beijing 100088 Peoples R China. E-mail Address:
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First-principle Calculation  Lda Plus u  Gga Plus u  Elastic Constants  Phonon Dispersion  
Fabrication and optical optimization of spot-size converters with strong cladding layers 期刊论文
JOURNAL OF OPTICS A-PURE AND APPLIED OPTICS, 2009, 卷号: 11, 期号: 8, 页码: Art. No. 085002
Authors:  Liu Y;  Li Y;  Fan ZC;  Xing B;  Yu YD;  Yu JZ;  Liu Y Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address:
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Silicon-on-insulator (Soi)  Spot-size Converters  
Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy 期刊论文
JOURNAL OF LUMINESCENCE, 2009, 卷号: 129, 期号: 9, 页码: 1073-1077
Authors:  Zhou B;  Pan SW;  Chen SY;  Li C;  Lai HK;  Yu JZ;  Zhu XF;  Chen SY Xiamen Univ Dept Phys Semicond Photon Res Ctr Xiamen 361005 Fujain Peoples R China. E-mail Address:
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Heterostructure  Nanostructure  Porous Si  Porous Sige  Photoluminescence  
Observation of the surface circular photogalvanic effect in InN films 期刊论文
SOLID STATE COMMUNICATIONS, 2009, 卷号: 149, 期号: 25-26, 页码: 1004-1007
Authors:  Zhang Z;  Zhang R;  Xie ZL;  Liu B;  Li M;  Fu DY;  Fang HN;  Xiu XQ;  Lu H;  Zheng YD;  Chen YH;  Tang CG;  Wang ZG;  Zhang R Nanjing Univ Key Lab Adv Photon & Elect Mat Nanjing 210093 Peoples R China. E-mail Address:
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Inn  Surface Charge Accumulation Layer  Spin-dependent Current  Spin Splitting  
Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods 期刊论文
SOLID STATE COMMUNICATIONS, 2009, 卷号: 149, 期号: 43-44, 页码: 1897-1901
Authors:  Zhou B;  Pan SW;  Chen R;  Chen SY;  Li C;  Lai HK;  Yu;  JZ;  Zhu XF;  Chen, SY, Xiamen Univ, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China. E-mail Address:
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Strain-induced  Electrochemical Anodization  Silicon Germanium  Heterogeneous Nanostructures  Porous Silicon Layer  Visible Photoluminescence  Surface-morphology  Thin-films  Si  Germanium  Superlattices  Nanocrystals  Relaxation  Growth  
宽禁带半导体异质结能带不连续值的测定以及低维结构散射机制的研究 学位论文
, 北京: 中国科学院半导体研究所, 2009
Authors:  张宝利
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