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蓝宝石图形衬底上GaN低温缓冲层的研究 期刊论文
半导体技术, 2011, 卷号: 36, 期号: 10, 页码: 760-764
Authors:  吴猛;  曾一平;  王军喜;  胡强
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Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method 期刊论文
MATERIALS LETTERS, 2010, 卷号: 64, 期号: 9, 页码: 1031-1033
Authors:  Sun LL (Sun Lili);  Liu C (Liu Chao);  Li JM (Li Jianming);  Wang JX (Wang Junxi);  Yan FW (Yan Fawang);  Zeng YP (Zeng Yiping);  Li JM (Li Jinmin);  Sun, LL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: lilisun@semi.ac.cn
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Magnetic Materials  Semiconductors  Ion implantatIon  
一种化学气相沉积装置 专利
专利类型: 发明, 专利号: CN201010162506.4, 公开日期: 2011-08-31
Inventors:  段瑞飞;  曾一平;  王军喜;  冉军学;  胡国新;  羊建坤;  梁勇;  路红喜;  李晋闽
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一种用于金属有机物化学气相沉积设备的进气喷头结构 专利
专利类型: 发明, 专利号: CN201010269018.3, 公开日期: 2011-08-31
Inventors:  冉军学;  胡国新;  梁勇;  王军喜;  段瑞飞;  曾一平;  李晋闽
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用于金属化学气相沉积设备反应室的进气喷淋头 专利
专利类型: 发明, 专利号: CN102492937A, 公开日期: 2012-08-29, 2012-08-29, 2012-08-29
Inventors:  冉军学;  胡强;  梁勇;  胡国新;  王军喜;  曾一平;  李晋闽
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