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Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 10, 页码: Art. No. 106802
Authors:  Guo X (Guo Xi);  Wang H (Wang Hui);  Jiang DS (Jiang De-Sheng);  Wang YT (Wang Yu-Tian);  Zhao DG (Zhao De-Gang);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Zhang SM (Zhang Shu-Ming);  Yang H (Yang Hui);  Guo, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: guox@semi.ac.cn
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Ingan  In-plane Grazing Incidence X-ray Diffraction  Reciprocal Space Mapping  Biaxial Strain  Critical Layer Thickness  Optical-properties  Lattice-constants  Gan  Heterostructures  Alloys  Wells  
The fabrication of GaN-based nanopillar light-emitting diodes 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 7, 页码: Art. No. 074302
Authors:  Zhu JH (Zhu Jihong);  Wang LJ (Wang Liangji);  Zhang SM (Zhang Shuming);  Wang H (Wang Hui);  Zhao DG (Zhao Degang);  Zhu JJ (Zhu Jianjun);  Liu ZS (Liu Zongshun);  Jiang DS (Jiang Desheng);  Yang H (Yang Hui);  Zhu, JH, Chinese AcadSci, State Key Lab Integrated Optoelect, InstSemicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn
Adobe PDF(536Kb)  |  Favorite  |  View/Download:1459/463  |  Submit date:2010/11/14
Masks  Ni  
Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 7, 页码: Art. No. 076804
Authors:  Guo X (Guo Xi);  Wang YT (Wang Yu-Tian);  Zhao DG (Zhao De-Gang);  Jiang DS (Jiang De-Sheng);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Wang H (Wang Hui);  Zhang SM (Zhang Shu-Ming);  Qiu YX (Qiu Yong-Xin);  Xu K (Xu Ke);  Yang H (Yang Hui);  Guo, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: guox@semi.ac.cn
Adobe PDF(802Kb)  |  Favorite  |  View/Download:1188/334  |  Submit date:2010/08/17
In-plane Grazing Incidence X-ray Diffraction  Gallium Nitride  Mosaic Structure  Biaxial Strain  Chemical-vapor-deposition  Lattice-constants  Aln  
Abnormal photoabsorption in high resistance GaN epilayer 期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 11, 页码: 8048-8051
Authors:  Liu WB (Liu Wen-Bao);  Zhao DG (Zhao De-Gang);  Jiang DS (Jiang De-Sheng);  Liu ZS (Liu Zong-Shun);  Zhu JJ (Zhu Jian-Jun);  Zhang SM (Zhang Shu-Ming);  Yang H (Yang Hui);  Liu, WB, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. wbliu@semi.ac.cn
Adobe PDF(685Kb)  |  Favorite  |  View/Download:1123/349  |  Submit date:2010/12/27
Gan  Exciton  Photovoltaic Spectroscopy  Msm  Photoresponsivity  
Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 11, 页码: Art. No. 114215
Authors:  Zeng C (Zeng Chang);  Zhang SM (Zhang Shu-Ming);  Ji L (Ji Lian);  Wang HB (Wang Huai-Bing);  Zhao DG (Zhao De-Gang);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Jiang DS (Jiang De-Sheng);  Cao Q (Cao Qing);  Chong M (Chong Ming);  Duan LH (Duan Li-Hong);  Wang H (Wang Hai);  Shi YS (Shi Yong-Sheng);  Liu SY (Liu Su-Ying);  Yang H (Yang Hui);  Chen LH (Chen Liang-Hui);  Zeng, C, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn
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Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 2, 页码: Art. No. 026804
Authors:  Lu GJ (Lu Guo-Jun);  Zhu JJ (Zhu Jian-Jun);  Jiang DS (Jiang De-Sheng);  Wang YT (Wang Yu-Tian);  Zhao DG (Zhao De-Gang);  Liu ZS (Liu Zong-Shun);  Zhang SM (Zhang Shu-Ming);  Yang H (Yang Hui);  Zhu, JJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail Address: jjzhu@red.semi.ac.cn
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Metalorganic Chemical Vapor Deposition  Al1-xinxn  Gradual Variation In Composition  Optical Reflectance Spectra  X-ray-diffraction  Phase Epitaxy  Relaxation  Films  Heterostructures  Separation  Dynamics  Alloys  Region  Layers  
Internal quantum efficiency analysis of solar cell by genetic algorithm 期刊论文
SOLAR ENERGY, 2010, 卷号: 84, 期号: 11, 页码: 1888-1891
Authors:  Xiong KL (Xiong Kanglin);  Lu SL (Lu Shulong);  Zhou TF (Zhou Taofei);  Jiang DS (Jiang Desheng);  Wang RX (Wang Rongxin);  Qiu K (Qiu Kai);  Dong JR (Dong Jianrong);  Yang H (Yang Hui);  Yang, H, Chinese Acad Sci, Inst Semicond, A35 Qing Hua E Rd, Beijing 100083, Peoples R China. 电子邮箱地址: hyang2006@sinano.ac.cn
Adobe PDF(301Kb)  |  Favorite  |  View/Download:1224/519  |  Submit date:2010/11/27
Internal Quantum Efficiency  Surface Recombination  Genetic Algorithm  Full Spectra  
Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer 期刊论文
THIN SOLID FILMS, 2010, 卷号: 518, 期号: 17, 页码: 5028-5031
Authors:  Wang H (Wang H.);  Jiang DS (Jiang D. S.);  Jahn U (Jahn U.);  Zhu JJ (Zhu J. J.);  Zhao DG (Zhao D. G.);  Liu ZS (Liu Z. S.);  Zhang SM (Zhang S. M.);  Yang H (Yang H.);  Wang, H, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangh@semi.ac.cn
Adobe PDF(656Kb)  |  Favorite  |  View/Download:1183/445  |  Submit date:2010/08/17
Gallium Nitride  Indium Gallium Nitride  Cathodeluminescence  X-ray Diffraction  Metal-organic Chemical Vapor Deposition  
Effective recombination velocity of textured surfaces 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 19, 页码: Art. No. 193107
Authors:  Xiong KL (Xiong Kanglin);  Lu SL (Lu Shulong);  Jiang DS (Jiang Desheng);  Dong JR (Dong Jianrong);  Yang H (Yang Hui);  Xiong, KL, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China. 电子邮箱地址: hyang2006@sinano.ac.cn
Adobe PDF(272Kb)  |  Favorite  |  View/Download:1296/440  |  Submit date:2010/06/04
Carrier Lifetime  Numerical Analysis  Semiconductor Thin Films  Surface Recombination  Surface Texture  
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 3, 页码: Art. No. 036801
Authors:  Wu YX (Wu Yu-Xin);  Zhu JJ (Zhu Jian-Jun);  Chen GF (Chen Gui-Feng);  Zhang SM (Zhang Shu-Ming);  Jiang DS (Jiang De-Sheng);  Liu ZS (Liu Zong-Shun);  Zhao DG (Zhao De-Gang);  Wang H (Wang Hui);  Wang YT (Wang Yu-Tian);  Yang H (Yang Hui);  Zhu, JJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: jjzhu@red.semi.ac.cn
Adobe PDF(2176Kb)  |  Favorite  |  View/Download:1287/389  |  Submit date:2010/04/13
Gan  Si (111) Substrate  Metalorganic Chemical Vapour Deposition  Aln Buffer Layer  Algan Interlayer  : Vapor-phase Epitaxy  Crack-free Gan  Stress-control  Si(111)  Deposition  Alxga1-xn  Film