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Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 48, 期号: 2, 页码: Art. No. 021001
Authors:  Ding K;  Zeng YP;  Duan RF;  Wei XC;  Wang JX;  Ma P;  Lu HX;  Cong PP;  Li JM;  Ding K Chinese Acad Sci Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address:
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Localization  Semiconductors  Emission  Boxes  Band  
A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes 期刊论文
APPLIED PHYSICS B-LASERS AND OPTICS, 2009, 卷号: 97, 期号: 2, 页码: 465-468
Authors:  Ding K (Ding, K.);  Zeng YP (Zeng, Y. P.);  Wei XC (Wei, X. C.);  Li ZC (Li, Z. C.);  Wang JX (Wang, J. X.);  Lu HX (Lu, H. X.);  Cong PP (Cong, P. P.);  Yi XY (Yi, X. Y.);  Wang GH (Wang, G. H.);  Li JM (Li, J. M.);  Ding, K, Chinese Acad Sci, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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