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在Si基片上生长高密度超小型Ge量子点的方法 专利
专利类型: 发明, 申请日期: 2006-03-15, 公开日期: 2009-06-04, 2009-06-11
Inventors:  时文华;  李传波;  王容伟;  罗丽萍;  王启明
Adobe PDF(406Kb)  |  Favorite  |  View/Download:826/191  |  Submit date:2009/06/11
Growth of near planar Si0.5Ge0.5 epitaxial layers directly on Si substrate by UHV/CVD at 500℃ 期刊论文
功能材料与器件学报, 2006, 卷号: 12, 期号: 1, 页码: 5-9
Authors:  ZHAO Lei;  Zuo Yuhua;  Li Chuanbo;  Cheng Buwen;  Luo Liping;  Yu Jinzhong;  Wang Qiming
Adobe PDF(331Kb)  |  Favorite  |  View/Download:818/214  |  Submit date:2010/11/23