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Micro-raman investigation of defects in a 4H-SiC homoepilayer 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Li, JM (Li, J. M.);  Zhao, YM (Zhao, Y. M.);  Li, JY (Li, J. Y.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Luo, MC (Luo, M. C.);  Zeng, YP (Zeng, Y. P.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1318Kb)  |  收藏  |  浏览/下载：1328/197  |  提交时间：2010/03/29
Micro-raman  4h-sic  Defects  3c-inclusions  Triangle-shaped Inclusion  Epitaxial Layers  Silicon-carbide  
Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
作者:  Liu, XF (Liu, X. F.);  Sun, GS (Sun, G. S.);  Li, JM (Li, J. M.);  Ning, J (Ning, J.);  Zhao, YM (Zhao, Y. M.);  Luo, MC (Luo, M. C.);  Wang, L (Wang, L.);  Zhao, WS (Zhao, W. S.);  Zeng, YP (Zeng, Y. P.);  Liu, XF, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(209Kb)  |  收藏  |  浏览/下载：1259/273  |  提交时间：2010/03/29
Avalanche Photodiodes  Area  
无权访问的条目 期刊论文
作者:  Wei, HY (Wei, H. Y.);  Cong, GW (Cong, G. W.);  Zhang, PF (Zhang, P. F.);  Hu, WG (Hu, W. G.);  Wu, JJ (Wu, J. J.);  Jiao, CM (Jiao, C. M.);  Liu, XL (Liu, X. L.);  Zhu, QS (Zhu, Q. S.);  Wang, ZG (Wang, Z. G.);  Wei, HY, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 10083, Peoples R China. 电子邮箱地址: why@semi.ac.cn
Adobe PDF(418Kb)  |  收藏  |  浏览/下载：1110/391  |  提交时间：2010/03/29