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Normal-incident SiGe/Si MQWs photodetectors operating at 1.3 mu m 会议论文
PHOTONICS TECHNOLOGY INTO THE 21ST CENTURY: SEMICONDUCTORS, MICROSTRUCTURES, AND NANOSTRUCTURES, 3899, SINGAPORE, SINGAPORE, DEC 01-03, 1999
作者:  Cheng BW;  Li C;  Yang QQ;  Wang HJ;  Luo LP;  Yu JZ;  Wang QM;  Cheng BW Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(176Kb)  |  收藏  |  浏览/下载：1175/229  |  提交时间：2010/10/29
Sige/si  Mqws  Photodetector  1.3 Mu-m  Si/sio2  
New way to enhance the uniformity of self-organized InAs quantum dots 会议论文
COMPOUND SEMICONDUCTORS 1998, (162), NARA, JAPAN, OCT 12-16, 1998
作者:  Zhu HJ;  Wang H;  Wang ZM;  Cui LQ;  Feng SL;  Zhu HJ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(312Kb)  |  收藏  |  浏览/下载：1070/173  |  提交时间：2010/11/15
Molecular-beam Epitaxy  Threshold  Growth  Laser  
Effect of carrier relaxation and emission on photoluminescence of InAs quantum dots 会议论文
PROCEEDINGS OF THE FIFTH INTERNATIONAL SYMPOSIUM ON QUANTUM CONFINEMENT: NANOSTRUCTURES, 98 (19), BOSTON, MA, NOV 02-05, 1998
作者:  Zhu HJ;  Wang ZM;  Sun BQ;  Feng SL;  Jiang DS;  Zheng HZ;  Zhu HJ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：853/0  |  提交时间：2010/10/29