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Novel photonic crystal structure GaN-based light-emitting diodes - art. no. 68410J 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Hu HY;  Lu L;  Du W;  Liu HW;  Kan Q;  Wang CX;  Xu XS;  Chen HD;  Hu, HY, Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.
Adobe PDF(608Kb)  |  收藏  |  浏览/下载：1909/537  |  提交时间：2010/03/09
Gan  
Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer 会议论文
2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, Sorrento, ITALY, SEP 17-19, 2008
作者:  Cheng BW;  Xue HY;  Hu D;  Han GQ;  Zeng YG;  Bai AQ;  Xue CL;  Luo LP;  Zuo YH;  Wang QM;  Cheng, BW, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(331Kb)  |  收藏  |  浏览/下载：1504/312  |  提交时间：2010/03/09
Sige/si(100) Epitaxial-films