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Temperature performance of the edge emitting transistor laser 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 1, 页码: 13503
Authors:  Liang S;  Zhu HL;  Kong DH;  Niu B;  Zhao LJ;  Wang W;  Liang, S (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China, liangsong@semi.ac.cn
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Heterostructure Laser  Bipolar-transistor  Operation  Integration  
Localized surface plasmon-enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 18, 页码: 181116
Authors:  Zhang SG (Zhang S. G.);  Zhang XW (Zhang X. W.);  Yin ZG (Yin Z. G.);  Wang JX (Wang J. X.);  Dong JJ (Dong J. J.);  Gao HL (Gao H. L.);  Si FT (Si F. T.);  Sun SS (Sun S. S.);  Tao Y (Tao Y.)
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Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 10, 页码: Article no.102104
Authors:  Hou QF;  Wang XL;  Xiao HL;  Wang CM;  Yang CB;  Yin HB;  Deng QW;  Li JM;  Wang ZG;  Hou X;  Hou, QF, Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. qfhou@semi.ac.cn
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Quantum-well-structure  Algan/gan Heterostructure  Yellow Luminescence  Deep Levels  Trap  Performance  Frequency  Epilayers  Origin  Diodes  
A self-aligned process for phase-change material nanowire confined within metal electrode nanogap 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 17, 页码: 173107
Authors:  Ma, HL;  Wang, XF;  Zhang, JY;  Wang, XD;  Hu, CX;  Yang, X;  Fu, YC;  Chen, XG;  Song, ZT;  Feng, SL;  Ji, A;  Yang, FH;  Yang, FH (reprint author), Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China,fhyang@red.semi.ac.cn
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Change Memory  Nonvolatile  Storage  Cell