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Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001) 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:  Wang YL;  Wu J;  Chen YH;  Wang ZG;  Zeng YP;  Wang, YL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(4662Kb)  |  收藏  |  浏览/下载：1240/180  |  提交时间：2010/03/29
Layer-ordering Orientation  
High performance resonant tunneling diode on a new material structure 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Wang JL;  Liu ZL;  Wang LC;  Zeng YP;  Yang FH;  Bai YX;  Wang, JL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(535Kb)  |  收藏  |  浏览/下载：1256/245  |  提交时间：2010/03/29
Resonant Tunneling Diode