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Experimental Research on Carrier Redistribution in InAs/GaAs Quantum Dots 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 9, 页码: 097201
Authors:  Li CF (Li Chuan-Feng);  Chen G (Chen Geng);  Gong M (Gong Ming);  Li HQ (Li Hai-Qiao);  Niu ZC (Niu Zhi-Chuan)
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Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 5, 页码: Art. No. 057101
Authors:  Deng HX (Deng Hui-Xiong);  Jiang XW (Jiang Xiang-Wei);  Tang LM (Tang Li-Ming);  Deng, HX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: hxdeng@semi.ac.cn
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Simulation  Transistors  Limit  Nm  
Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 11, 页码: Art. No. 114215
Authors:  Zeng C (Zeng Chang);  Zhang SM (Zhang Shu-Ming);  Ji L (Ji Lian);  Wang HB (Wang Huai-Bing);  Zhao DG (Zhao De-Gang);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Jiang DS (Jiang De-Sheng);  Cao Q (Cao Qing);  Chong M (Chong Ming);  Duan LH (Duan Li-Hong);  Wang H (Wang Hai);  Shi YS (Shi Yong-Sheng);  Liu SY (Liu Su-Ying);  Yang H (Yang Hui);  Chen LH (Chen Liang-Hui);  Zeng, C, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn
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Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 5, 页码: Art. No. 054204
Authors:  Ji L (Ji Lian);  Zhang SM (Zhang Shu-Ming);  Jiang DS (Jiang De-Sheng);  Liu ZS (Liu Zong-Shun);  Zhang LQ (Zhang Li-Qun);  Zhu JJ (Zhu Jian-Jun);  Zhao DG (Zhao De-Gang);  Duan LH (Duan Li-Hong);  Yang H (Yang Hui);  Ji, L, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jilian@red.semi.ac.cn;  smzhang@red.semi.ac.cn
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Diodes  
Proposal of an Ultracompact Triplexer Using Photonic Crystal Waveguide with an Air Holes Array 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 8, 页码: Art. No. 084201
Authors:  He LJ (He Ling-Juan);  Xu XM (Xu Xu-Ming);  Liu NH (Liu Nian-Hua);  Yu TB (Yu Tian-Bao);  Fang LG (Fang Li-Guang);  Liao QH (Liao Qing-Hua);  He, LJ, Nanchang Univ, Dept Phys, Nanchang 330031, Peoples R China. E-mail Address: yutianbao@ncu.edu.cn
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Polarizing Beam Splitter  Design  
Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 10, 页码: Art.No.107801
Authors:  Wang HL (Wang Hai-Li);  Xiong YH (Xiong Yong-Hua);  Huang SS (Huang She-Song);  Ni HQ (Ni Hai-Qiao);  He ZH (He Zhen-Hong);  Dou XM (Dou Xiu-Ming);  Niu ZC (Niu Zhi-Chuan);  Wang, HL, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@red.semi.ac.cn
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1.3 Mu-m  
Effects of Ag on electrical properties of Ag/Ni/p-GaN ohmic contact 期刊论文
CHINESE PHYSICS LETTERS, 2007, 卷号: 24, 期号: 6, 页码: 1741-1744
Authors:  Zhao DS (Zhao De-Sheng);  Zhang SM (Zhang Shu-Ming);  Duan LH (Duan Li-Hong);  Wang YT (Wang Yu-Tian);  Jiang DS (Jiang De-Sheng);  Liu WB (Liu Wen-Bao);  Zhang BS (Zhang Bao-Shun);  Zhao, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: desheng.zhao@163.com
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Light-emitting-diodes  
Influence of GaAsP insertion layers on performance of InGaAsP/InGaP/AlGaAs quantum-well laser 期刊论文
CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 9, 页码: 2583-2586
Authors:  Cao YL (Cao Yu-Lian);  Lian P (Lian Peng);  Ma WQ (Ma Wen-Quan);  Wang Q (Wang Qing);  Wu XM (Wu Xu-Ming);  He GR (He Guo-Rong);  Li H (Li Hui);  Wang XD (Wang Xiao-Dong);  Song GF (Song Guo-Feng);  Chen LH (Chen Liang-Hui);  Cao, YL, Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, Beijing 100083, Peoples R China. E-mail: caoyl@semi.ac.cn
Adobe PDF(249Kb)  |  Favorite  |  View/Download:1147/298  |  Submit date:2010/04/11
Vapor-phase Epitaxy  Diode-lasers  Interface Characteristics  Growth Sequence  Movpe Growth  Lp-movpe  Heterostructures  Heterojunction  Power  Nm