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Dependence of transport properties in tunnel junction on boron doping 会议论文
Physica Status Solidi C-Current Topics in Solid State Physics VOL 7 NO 3-4, 7 (3-4): 1109-1111 2010, Utrecht, NETHERLANDS, AUG 23-28, 2009
作者:  Shi MJ;  Zeng XB;  Liu SY;  Peng WB;  Xiao HB;  Liao XB;  Wang ZG;  Kong GL
Adobe PDF(157Kb)  |  收藏  |  浏览/下载：1629/358  |  提交时间：2011/07/14
Rashba electron transport in 1D quantum waveguides 会议论文
INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2, Hong Kong, PEOPLES R CHINA, JAN 03-08, 2010
作者:  Liu DY (Liu DuanYang);  Xia JB (Xia JianBai);  Chang YC (Chang YiaChung);  Xia, JB, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: xiajb@red.semi.ac.cn
Adobe PDF(45Kb)  |  收藏  |  浏览/下载：1653/334  |  提交时间：2010/11/01
Rashba Wave Function  One-dimensional Waveguide  Boundary Condition  
Tunneling magnetoresistance in (Ga,Mn)As/Al-O/CoFeB hybrid structures 会议论文
JOURNAL OF APPLIED PHYSICS, Austin, TX, NOV 11-14, 2008
作者:  Du GX;  Babu MR;  Han XF;  Deng JJ;  Wang WZ;  Zhao JH;  Wang WD;  Tang JK;  Han, XF, Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, State Key Lab Magnetism, POB 603, Beijing 100080, Peoples R China.
Adobe PDF(329Kb)  |  收藏  |  浏览/下载：2131/441  |  提交时间：2010/03/09
Spin Injection  
Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Zhao, YW;  Zhang, F;  Zhang, R;  Dong, ZY;  Wei, XC;  Zeng, YP;  Li, JM;  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(340Kb)  |  收藏  |  浏览/下载：1869/527  |  提交时间：2010/03/09
Zinc Oxide  Defect  Vacancy  
Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Wei, XC;  Zhao, YW;  Dong, ZY;  Li, JM;  Wei, XC, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(308Kb)  |  收藏  |  浏览/下载：1833/508  |  提交时间：2010/03/09
Zinc Oxide  X-ray Diffraction  Defects  Single Crystal  
Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Li, Y;  Yi, XY;  Wang, XD;  Guo, JX;  Wang, LC;  Wang, GH;  Yang, FH;  Zeng, YP;  Li, JM;  Li, Y, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(701Kb)  |  收藏  |  浏览/下载：3979/1521  |  提交时间：2010/03/09
Gan  Led  Plasma  Damage  Etch  Icp  Pecvd  
The effect of interposing nanocrystalline Si(B) P plus layer on the photovoltaic properties of a-Si: H tandem solar cells 会议论文
PROCEEDINGS OF ISES SOLAR WORLD CONGRESS 2007, Beijing, PEOPLES R CHINA, SEP 18-21, 2007
作者:  Shi, MJ;  Wang, ZG;  Zhang, C;  Peng, WB;  Zeng, XB;  Diao, HW;  Kong, GL;  Liao, XB;  Shi, MJ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(134Kb)  |  收藏  |  浏览/下载：1521/265  |  提交时间：2010/03/09
Parallel optical communication subsystem based on VCSEL - art. no. 67833I 会议论文
OPTICAL TRANSMISSION,SWITCHING,AND SUBSYSTEMS V, Wuhan, PEOPLES R CHINA, NOV 02-05, 2007
作者:  Chen XB;  Tang ML;  Chen HD;  Tang J;  Liu FM;  Chen, XB, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(1075Kb)  |  收藏  |  浏览/下载：1331/236  |  提交时间：2010/03/09
Very Short Reach  
Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Zeng, YX (Zeng, Yuxin);  Liu, W (Liu, Wei);  Yang, FH (Yang, Fuhua);  Xu, P (Xu, Ping);  Tan, PH (Tan, Pingheng);  Zheng, HZ (Zheng, Houzhi);  Zeng, YP (Zeng, Yiping);  Xing, YJ (Xing, Yingjie);  Yu, DP (Yu, Dapeng);  Zeng, YX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(561Kb)  |  收藏  |  浏览/下载：1513/264  |  提交时间：2010/03/29
Inas Quantum Dot  Photoluminescence  Modulation-doped  Field Effect Transistor  Mu-m  Capping Layer  
Growth of ZnO single crystal by chemical vapor transport method 会议论文
JOURNAL OF RARE EARTHS, Beijing, PEOPLES R CHINA, OCT 16-19, 2005
作者:  Zhou, JM;  Dong, ZY;  Wei, XC;  Duan, ML;  Li, JM;  Zhou, JM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
Adobe PDF(268Kb)  |  收藏  |  浏览/下载：1764/561  |  提交时间：2010/03/29
Zinc Oxide