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Fabrication and Investigation of High Efficiency Evanescently Coupled Uni-Traveling Carrier Photodiodes 会议论文
2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), Singapore, SINGAPORE, DEC 08-11, 2008
作者:  Zhang YX;  Liao ZY;  Sun Y;  Chen WX;  Zhao LJ;  Zhu HL;  Wang W;  Zhang, YX, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(216Kb)  |  收藏  |  浏览/下载：1650/307  |  提交时间：2010/03/09
Optimization  
Reliable concentrated photovoltaic system with compound concentrator 会议论文
PROCEEDINGS OF ISES SOLAR WORLD CONGRESS 2007, Beijing, PEOPLES R CHINA, SEP 18-21, 2007
作者:  Chen NF;  Bai YM;  Wu JL;  Wang YS;  Wang XH;  Huang TM;  Chen, NF, CAS, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(356Kb)  |  收藏  |  浏览/下载：1263/238  |  提交时间：2010/03/09
Solar-cells  
Tolerance analysis for incident angle of volume phase holographic grating used in optical channel performance monitor 会议论文
PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON INSTRUMENTATION SCIENCE AND TECHNOLOGY, VOL 3, Xian, PEOPLES R CHINA, AUG 18-22, 2004
作者:  Xin HL;  Li F;  Cao P;  He YJ;  Chen P;  Liu YL;  Xin HL Chinese Acad Sci Inst Semicond Res & Dev Ctr Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(571Kb)  |  收藏  |  浏览/下载：1221/196  |  提交时间：2010/10/29
Ocpm  Vphg  Incident Angle  Tolerance  
1.5 mu m DFB integrated with vertical tapered spotsize converter fabricated by selective MOVPE 会议论文
INTEGRATED OPTICS: DEVICES, MATERIALS, AND TECHNOLOGIES VI, 4640, SAN JOSE, CA, FEB 21-23, 2002
作者:  Qiu WB;  Dong J;  Zhang JY;  Zhou F;  Zhu HL;  Wang W;  Qiu WB Chinese Acad Sci Natl Res Ctr Optoelect Technol Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(117Kb)  |  收藏  |  浏览/下载：1096/277  |  提交时间：2010/10/29
Spotsize Converter  Selective Area Growth  Butt-joint  Wave-guide  Lasers  
Studies of 6H-SiC devices 会议论文
CURRENT APPLIED PHYSICS, 2 (5), SEOUL, SOUTH KOREA, DEC 05-09, 2001
作者:  Wang SR;  Liu ZL;  Wang SR Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
收藏  |  浏览/下载：845/0  |  提交时间：2010/11/15
Sic  Schottky  Pn Junction Diodes  Mos Capacitor  Junction Diodes  
First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2) 会议论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 426 (1), FLORENCE, ITALY, MAR 04-06, 1998
作者:  Li Z;  Dezilllie B;  Eremin V;  Li CJ;  Verbitskaya E;  Li Z Brookhaven Natl Lab Bldg 535BPOB 5000 Upton NY 11973 USA.
Adobe PDF(429Kb)  |  收藏  |  浏览/下载：1515/327  |  提交时间：2010/11/15
Strip Detectors  Silicon Detectors  Annealing  Simulation  Irradiation  N-eff  Junction Detectors  Radiation-damage  Models