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Novel photonic crystal structure GaN-based light-emitting diodes - art. no. 68410J 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Hu HY;  Lu L;  Du W;  Liu HW;  Kan Q;  Wang CX;  Xu XS;  Chen HD;  Hu, HY, Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.
Adobe PDF(608Kb)  |  收藏  |  浏览/下载：1856/537  |  提交时间：2010/03/09
Gan  
Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001
作者:  Kang JY;  Shen YW;  Wang ZG;  Kang JY Xiamen Univ Dept Phys Xiamen 361005 Peoples R China.
Adobe PDF(133Kb)  |  收藏  |  浏览/下载：1198/238  |  提交时间：2010/11/15
Defects  Gan  Photoluminescence  Electronic Structures  Yellow Luminescence  Epitaxial-films  Mg  
Determination of the interdiffusion coefficients of liquid Zn and Sn using Ta/Zn-Sn/Si trilayers 会议论文
DIFFUSIONS IN MATERIALS: DIMAT2000, PTS 1 & 2, 194-1, PARIS, FRANCE, JUL 17-21, 2000
作者:  Wang WK;  Zhao JH;  Wang WK Chinese Acad Sci Inst Phys POB 60334 Beijing 100080 Peoples R China.
Adobe PDF(237Kb)  |  收藏  |  浏览/下载：839/144  |  提交时间：2010/11/15
Convection-less Condition  Liquid Metal Diffusion  Solid/liquid-liquid/solid Trilayer