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In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:  Sun, GS;  Zhao, YM;  Wang, L;  Zhao, WS;  Liu, XF;  Ji, G;  Zeng, YP;  Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(273Kb)  |  收藏  |  浏览/下载：1646/274  |  提交时间：2010/03/09
In-situ Doping  Boron  Aluminum  Memory Effects  Hot-wall Lpcvd  4h-sic  
The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Wei, TB;  Duan, RF;  Wang, JX;  Li, JM;  Huo, ZQ;  Zeng, YP;  Wei, TB, Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China.
Adobe PDF(954Kb)  |  收藏  |  浏览/下载：1773/511  |  提交时间：2010/03/09
Hvpe  Gan  Nitridation  Polarity  Etching  
High epitaxial growth rate of 4H-SiC using TCS as silicon precursor 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Ji, G;  Sun, GS;  Ning, J;  Liu, XF;  Zhao, YM;  Wang, L;  Zhao, WS;  Zeng, YP;  Ji, G, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(1783Kb)  |  收藏  |  浏览/下载：1357/225  |  提交时间：2010/03/09
Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Yin, HB;  Wang, XL;  Hu, GX;  Ran, JX;  Xiao, HL;  Li, JM;  Yin, HB, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(3395Kb)  |  收藏  |  浏览/下载：1256/326  |  提交时间：2010/03/09
In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Liu, YF;  Xie, J;  Yang, JL;  Tang, LJ;  Yang, FH;  Liu, YF, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(1394Kb)  |  收藏  |  浏览/下载：1431/370  |  提交时间：2010/03/09
Films  
Synthesis of GaN nanorods with vertebra-like morphology 会议论文
2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems, Zhuhai, PEOPLES R CHINA, JAN 18-21, 2006
作者:  Gao, HY (Gao, Haiyong);  Li, JM (Li, Jinmin);  Gao, HY, Chinese Acad Sci, Inst Semicond, Novel Mat Dept, Beijing 100083, Peoples R China.
Adobe PDF(3971Kb)  |  收藏  |  浏览/下载：1248/240  |  提交时间：2010/03/29
Gan Nanorods  Ga2o3/zno Films  Nitritding  Morphology  Chemical-vapor-deposition  Films  
Research on the band-gap of InN grown on siticon substrates 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Xiao, HL;  Wang, XL;  Wang, JX;  Zhang, NH;  Liu, HX;  Zeng, YP;  Li, JM;  Xiao, HL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(164Kb)  |  收藏  |  浏览/下载：1365/408  |  提交时间：2010/03/29
Molecular-beam Epitaxy  Wurtzite Inn  Nitride  Absorption  Alloys  Films  
Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires 会议论文
Science and Technology of Nanomaterials - ICMAT 2003丛书标题: JOURNAL OF METASTABLE AND NANOCRYSTALLINE MATERIALS SERIES, Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Zeng, XB;  Liao, XB;  Dai, ST;  Wang, B;  Xu, YY;  Xiang, XB;  Hu, ZH;  Diao, HW;  Kong, GL;  Zeng, XB, Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China.
Adobe PDF(892Kb)  |  收藏  |  浏览/下载：1657/241  |  提交时间：2010/03/29
Chemical Vapor Deposition Processes  Nanomaterials  Semiconducting Silicon  Visible Photoluminescence  Porous Silicon  Amorphous-silicon  Si  Spectroscopy  Films  Nanostructures  Confinement  Growth  
Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Sun, GS;  Ning, J;  Zhang, YX;  Gao, X;  Wang, L;  Zhao, WS;  Zeng, YP;  Li, JM;  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(201Kb)  |  收藏  |  浏览/下载：1312/208  |  提交时间：2010/03/29
4h-sic  Lpcvd Homoepitaxial Growth  Thermal Oxidization  Mos Structures  Hot-wall Cvd  
High-mobility Ga-polarity GaN achieved by NH3-MBE 会议论文
GAN AND RELATED ALLOYS-2002, 743, BOSTON, MA, DEC 02-06, 2002
作者:  Wang JX;  Wang XL;  Sun DZ;  Li JM;  Zeng YP;  Hu GX;  Liu HX;  Lin LY;  Wang JX Chinese Acad Sci Inst Semicond Mat Ctr POB 912 Beijing 100083 Peoples R China.
Adobe PDF(119Kb)  |  收藏  |  浏览/下载：1719/427  |  提交时间：2010/10/29
Molecular-beam Epitaxy  Ion-scattering Spectroscopy  Lattice Polarity  Single-crystals  Films  Polarization  Gan(0001)  Surfaces  Growth  Diodes