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Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (1-2), SINGAPORE, SINGAPORE, JUL 01-06, 2001
作者:  Xie MH;  Cheung SH;  Zheng LX;  Tong SY;  Zhang BS;  Yang H;  Xie MH Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
Adobe PDF(1325Kb)  |  收藏  |  浏览/下载：1333/242  |  提交时间：2010/11/15
Molecular-beam Epitaxy  
In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE 会议论文
JOURNAL OF CRYSTAL GROWTH, 221, SAPPORO, JAPAN, JUN 05-09, 2000
作者:  Lu DC;  Wang CX;  Yuan HR;  Liu XL;  Wang XH;  Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat & Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(428Kb)  |  收藏  |  浏览/下载：1314/179  |  提交时间：2010/11/15
Gan  Annealing Treatment  In-doping  Movpe  Photoluminescence  Chemical-vapor-deposition  Phase Epitaxy  Buffer Layer  Films  Sapphire