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A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics 会议论文
2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), Singapore, SINGAPORE, DEC 08-11, 2008
作者:  Wang, LS;  Zhao, LJ;  Pan, JQ;  Zhang, W;  Wang, H;  Liang, S;  Zhu, HL;  Wang, W;  Wang, LS, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(204Kb)  |  收藏  |  浏览/下载：1394/343  |  提交时间：2010/03/09
P-i-n/hbt  Wave-guide  Inp/ingaas  Frequency  Hbt  
Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Miao, ZH (Miao, Zhenhua);  Gong, Z (Gong, Zheng);  Fang, ZD (Fang, Zhidan);  Niu, ZC (Niu, Zhichuan);  Gong, Z, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(378Kb)  |  收藏  |  浏览/下载：1442/291  |  提交时间：2010/03/29
Atomic Hydrogen  Molecular Beam Epitaxy  Step Arrays  Molecular-beam Epitaxy  Atomic-hydrogen  Vicinal Surface  Quantum Dots  Growth  Temperature  Irradiation  Mechanism  Mbe  
1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Niu, ZC;  Zhang, SY;  Ni, HQ;  Wu, DH;  He, ZH;  Sun, Z;  Han, Q;  Wu, RG;  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(325Kb)  |  收藏  |  浏览/下载：1451/372  |  提交时间：2010/03/29
Improved Luminescence Efficiency  Temperature  Photoluminescence  Nitrogen  Origin  Diodes  
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)  |  收藏  |  浏览/下载：1496/405  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Gaassb/gaas  Gaas  Lasers  Gain  
Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE 会议论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 17 (1-4), TOULOUSE, FRANCE, JUL 22-26, 2002
作者:  Lan Q;  Niu ZC;  Zhou DY;  Kong YC;  Wang XD;  Miao ZH;  Feng SL;  Niu ZC Chinese Acad Sci Natl Lab Superlattices Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(252Kb)  |  收藏  |  浏览/下载：1066/218  |  提交时间：2010/11/15
Optimization of InGaAs quantum dots for optoelectronic applications 会议论文
TWENTY SEVENTH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES, CONFERENCE DIGEST, SAN DIEGO, CA, SEP 22-26, 2002
作者:  Duan RF;  Wang BQ;  Zhu ZP;  Zeng YP;  Duan RF Chinese Acad Sci Novel Mat Dept Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(127Kb)  |  收藏  |  浏览/下载：1082/245  |  提交时间：2010/10/29
Infrared Photodetectors  
Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry 会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001
作者:  Ye XL;  Chen YH;  Xu B;  Wang ZG;  Chen YH Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(125Kb)  |  收藏  |  浏览/下载：1061/220  |  提交时间：2010/11/15
Reflectance-difference Spectroscopy  Indium Segregation  Ingaas/gaas Quantum Wells  Epitaxy-grown Ingaas/gaas  Surface Segregation  Interface  
A novel high sensitivity CE-PTHPT for optical fiber communication 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Guohui L;  Yang R;  Dejun H;  Chengzhou J;  Shucheng D;  Eenjun Z;  YiPing Z;  Junming Z;  Guohui L Beijing Normal Univ Inst Low Energy Nucl Phys Key Lab Beam Technol & Mat Modificat Beijing 100875 Peoples R China.
Adobe PDF(58Kb)  |  收藏  |  浏览/下载：1290/351  |  提交时间：2010/10/29
Phototransistors  Optical Fiber Communication  Gaas  Inp  Heterojunction Phototransistor  High-gain  
Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文
PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2, KANAZAWA, JAPAN, MAY 27-31, 2001
作者:  Niu ZC;  Wang XD;  Miao ZH;  Lan Q;  Kong YC;  Zhou DY;  Feng SL;  Niu ZC Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：1210/0  |  提交时间：2010/10/29
Molecular Beam Epitaxy  Ingaas Islands  Photolumineseence  Line-width  1.3 Mu-m  Inas/gaas Quantum Dots  Optical-properties  Cap Layer  Gaas  Luminescence  Strain  
Strained MQW electro-absorption modulators with high extinction ratio and low capacitance 会议论文
2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, NARA, JAPAN, MAY 14-18, 2001
作者:  Sun Y;  Wang W;  Chen WX;  Liu GL;  Zhou F;  Zhu HL;  Sun Y Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
Adobe PDF(272Kb)  |  收藏  |  浏览/下载：1225/281  |  提交时间：2010/10/29
Electroabsorption