中文版 | English

在结果中检索

SEMI OpenIR

浏览/检索结果: 共6条，第1-6条 帮助

限定条件        
已选(0)清除 条数/页：   排序方式：
Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well 会议论文
APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280, Wuhan, PEOPLES R CHINA, NOV 04-06, 2003
作者:  Ying-Qiang X;  Zhang W;  Niu ZC;  Wu RG;  Wang QM;  Ying-Qiang X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(75Kb)  |  收藏  |  浏览/下载：1632/495  |  提交时间：2010/10/29
Ganas  Sio2 Encapsulation  Rapid-thermal-annealing  Nitrogen Reorganization  Molecular-beam Epitaxy  Optical-properties  Mu-m  
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy 会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
作者:  Ye XL;  Chen YH;  Xu B;  Zeng YP;  Wang ZG;  Ye XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlye@red.semi.ac.cn
Adobe PDF(211Kb)  |  收藏  |  浏览/下载：1529/258  |  提交时间：2010/10/29
Short-period Superlattices  Raman-scattering  Quantum-wells  Growth  Roughness  Segregation  Alas/gaas  Alas  Gaas  
Upconversion emission of a Er3+-doped glass microsphere under 633 nm excitation 会议论文
MICROELECTRONICS JOURNAL, 35 (4), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Wang JY;  Ji GR;  Jin P;  Zhao LJ;  Zhang CZ;  Wang JY Bewing Univ Technol Coll Appl Sci Beijing 100022 Peoples R China. 电子邮箱地址: wangjiyou@bjut.edu.cn
Adobe PDF(94Kb)  |  收藏  |  浏览/下载：1250/244  |  提交时间：2010/10/29
Upconversion  Doped-er3++ Glass Microsphere  Morphology-dependent Resonances  
Structural optimizations of SOI-based single-mode rib waveguide bends 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Chen, YY;  Yan, QF;  Yang, D;  Chen, SW;  Yu, JZ;  Chen, YY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(138Kb)  |  收藏  |  浏览/下载：1123/216  |  提交时间：2010/03/29
Silicon-on-insulator  Bend Waveguide  Bend Loss  Integrated Optics  Silicon-on-insulator  
Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Li, N;  Zhang, GQ;  Liu, ZL;  Fan, K;  Zheng, ZS;  Lin, Q;  Zhang, ZX;  Lin, CL;  Li, N, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(144Kb)  |  收藏  |  浏览/下载：1659/231  |  提交时间：2010/03/29
Simox  Fluorine  Ionizing Radiation  
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)  |  收藏  |  浏览/下载：1509/405  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Gaassb/gaas  Gaas  Lasers  Gain