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稀铋 磷化物 InP 1-xBi x晶格 振动与电学输运特性的研究 学位论文
, 北京: 中国科学院半导体研究所, 2016
Authors:  魏冠男
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Bismuth-content-dependent polarized Raman spectrum of InPBi alloy 期刊论文
Chinese Physics B, 2016, 卷号: 25, 期号: 6, 页码: 66301-66306
Authors:  Guan-Nan Wei;  Qing-Hai Tan;  Xing Dai;  Qi Feng;  Wen-Gang Luo;  Yu Sheng;  Kai Wang;  Wen-Wu Pan;  Li-Yao Zhang;  Shu-Min Wang;  Kai-You Wang
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Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 3, 页码: Article no.33301
Authors:  Sun GS;  Liu XF;  Wu HL;  Yan GG;  Dong L;  Zheng L;  Zhao WS;  Wang L;  Zeng YP;  Li XG;  Wang ZG;  Sun, GS, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. gshsun@red.semi.ac.cn
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4h-sic  Raman Scattering  Lopc Modes  Transport Properties  Silicon-carbide  Light  Gap  
水平冷壁CVD生长4H-SiC同质外延膜 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 5, 页码: 936-940
Authors:  高欣;  孙国胜;  李晋闽;  赵万顺;  王雷;  张永兴;  曾一平
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