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Characteristics of InGaN multiple quantum well blue-violet laser diodes 期刊论文
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2006, 卷号: 49, 期号: 6, 页码: 727-732
Authors:  Li DY (Li Deyao);  Zhang SM (Zhang Shuming);  Wang JF (Wang Jianfeng);  Chen J (Chen Jun);  Chen LH (Chen Lianghui);  Chong M (Chong Ming);  Zhu JJ (Zhu Jianjun);  Zhao DG (Zhao Degang);  Liu ZS (Liu Zongshun);  Yang H (Yang Hui);  Liang JW (Liang Junwu);  Li, DY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail: dyli@red.semi.ac.cn
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Metalorganic Chemical Vapor Deposition (Mocvd)  Gan-hased Laser Diodes  Multiple Quantum Well  Ridge Waveguide  Threshold Current  Electrical-properties  Gan Substrate  Contacts