SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Characteristics of InGaN multiple quantum well blue-violet laser diodes
Li DY (Li Deyao); Zhang SM (Zhang Shuming); Wang JF (Wang Jianfeng); Chen J (Chen Jun); Chen LH (Chen Lianghui); Chong M (Chong Ming); Zhu JJ (Zhu Jianjun); Zhao DG (Zhao Degang); Liu ZS (Liu Zongshun); Yang H (Yang Hui); Liang JW (Liang Junwu); Li, DY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail: dyli@red.semi.ac.cn
2006
Source PublicationSCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES
ISSN1006-9321
Volume49Issue:6Pages:727-732
AbstractStudies on InGaN multiple quantum well blue-violet laser diodes have been reported. Laser structures with long-period multiple quantum wells were grown by metal-organic chemical vapor deposition. Triple-axis X-ray diffraction (TAXRD) measurements show that the multiple quantum wells were high quality. Ridge waveguide laser diodes were fabricated with cleaved facet mirrors. The laser diodes lase at room temperature under a pulsed current. A threshold current density of 3.3 kA/cm(2) and a characteristic temperature To of 145 K were observed for the laser diode.
metadata_83chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; chinese acad sci, inst semicond, nanooptoelect lab, beijing 100083, peoples r china
KeywordMetalorganic Chemical Vapor Deposition (Mocvd) Gan-hased Laser Diodes Multiple Quantum Well Ridge Waveguide Threshold Current Electrical-properties Gan Substrate Contacts
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2010-04-11
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/10244
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorLi, DY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail: dyli@red.semi.ac.cn
Recommended Citation
GB/T 7714
Li DY ,Zhang SM ,Wang JF ,et al. Characteristics of InGaN multiple quantum well blue-violet laser diodes[J]. SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES,2006,49(6):727-732.
APA Li DY .,Zhang SM .,Wang JF .,Chen J .,Chen LH .,...&Li, DY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail: dyli@red.semi.ac.cn.(2006).Characteristics of InGaN multiple quantum well blue-violet laser diodes.SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES,49(6),727-732.
MLA Li DY ,et al."Characteristics of InGaN multiple quantum well blue-violet laser diodes".SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES 49.6(2006):727-732.
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