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Superluminescent diode monolithically integrated with novel Y-branch by bundle integrated waveguide for fiber optic gyroscope - art. no. 68380D 会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION II, Beijing, PEOPLES R CHINA, NOV 12-15, 2007
作者:  Wang, L;  Zhao, LJ;  Chen, WX;  Pan, JQ;  Zhou, F;  Zhu, HL;  Wang, W;  Wang, L, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(737Kb)  |  收藏  |  浏览/下载：1638/408  |  提交时间：2010/03/09
Photonic Integrated Circuit  Y-branch  Superluminescent Diode  Bundle Integrated Guide  Far Field Pattern  Reactive Ion Etching  
1.5 mu m DFB integrated with vertical tapered spotsize converter fabricated by selective MOVPE 会议论文
INTEGRATED OPTICS: DEVICES, MATERIALS, AND TECHNOLOGIES VI, 4640, SAN JOSE, CA, FEB 21-23, 2002
作者:  Qiu WB;  Dong J;  Zhang JY;  Zhou F;  Zhu HL;  Wang W;  Qiu WB Chinese Acad Sci Natl Res Ctr Optoelect Technol Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(117Kb)  |  收藏  |  浏览/下载：1121/277  |  提交时间：2010/10/29
Spotsize Converter  Selective Area Growth  Butt-joint  Wave-guide  Lasers  
Electronic characteristics of InAs self-assembled quantum dots 会议论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 7 (3-4), FUKUOKA, JAPAN, JUL 12-16, 1999
作者:  Wang HL;  Feng SL;  Zhu HJ;  Ning D;  Chen F;  Wang HL Qufu Normal Univ Dept Phys Qufu 273165 Peoples R China.
Adobe PDF(105Kb)  |  收藏  |  浏览/下载：1136/237  |  提交时间：2010/11/15
Inas/gaas Quantum Dots  Self-assembled Structure  Dlts  Pl  Band Offset  Energy-levels  Carrier Relaxation  Spectroscopy  
Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures 会议论文
COMPOUND SEMICONDUCTORS 1999, (166), BERLIN, GERMANY, AUG 22-26, 1999
作者:  Wang H;  Wang HL;  Feng SL;  Zhu HJ;  Wang XD;  Guo ZS;  Ning D;  Wang H Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(448Kb)  |  收藏  |  浏览/下载：1020/186  |  提交时间：2010/11/15
Electronic-structure  Carrier Relaxation  Energy-levels  Spectroscopy  
Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells 会议论文
JOURNAL OF ELECTRONIC MATERIALS, 28 (5), CHARLOTTESVILLE, VIRGINIA, JUN 24-26, 1998
作者:  Yu GH;  Fan XW;  Guan ZP;  Zhang JY;  Zhao XW;  Shen DZ;  Zheng ZH;  Yang BJ;  Jiang DS;  Chen YB;  Zhu ZM;  Yu GH Chinese Acad Sci Lab Excited State Proc Changchun 130021 Peoples R China.
Adobe PDF(134Kb)  |  收藏  |  浏览/下载：1471/239  |  提交时间：2010/11/15
Double Multi-quantum Wells  Photocurrent Spectra  Zncdse-znse  Spectroscopy  Photoluminescence  Heterostructures  Photodetectors